Density functional theory study on the effect of NO annealing for SiC(0001) surface with atomic-scale steps
Mitsuharu Uemoto,
Nahoto Funaki,
Kazuma Yokota
et al.
Abstract:The effect of NO annealing on the electronic structures of the 4H-SiC(0001)/SiO2 interface with atomic-scale steps is investigated. The characteristic behavior of the conduction band edge (CBE) states is strongly affected by the atomic configurations in the SiO2 and the step structure, resulting in the discontinuity of the CBE states at the step edges, which prevents carriers from penetrating from the source to drain and decreases the mobile carrier density. We found that the behavior of the CBE states becomes… Show more
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