Geometric structures, stabilities, and electronic properties of SrSi n (n = 1-12) clusters have been investigated using the density-functional theory within the generalized gradient approximation. The optimized geometries indicate that one Si atom capped on SrSi n−1 structure and Sr atom capped Si n structure for difference SrSi n clusters in size are two dominant growth patterns. The calculated average binding energy, fragmentation energy, second-order energy difference, the highest occupied molecular orbital, and the lowest unoccupied molecular orbital (HOMO-LUMO) gaps show that the doping of Sr atom can enhance the chemical activity of the silicon framework. The relative stability of SrSi 9 is the strongest among the SrSi n clusters. According to the mulliken population and natural population analysis, it is found that the charge in SrSi n clusters transfer from Sr atom to the Si n host. In addition, the vertical ionization potential, vertical electron affinity, and chemical hardness are also discussed and compared.