Density control of carbon nanowalls grown by CH4/H2 plasma and their electrical properties

SnO2 Nanoparticles Decorated 2D Wavy Hierarchical Carbon Nanowalls with Enhanced Photoelectrochemical Performance

“…The peaks at 286.5 and 288.7 eV were assigned to C-O and O-C=O, respectively. These binding energies are in agreement with those reported in literature [9,12,24]. A similar procedure was utilized to decompose O 1s into two components such as C-OH and C-O bonds as revealed in Figure 4(d).…”

“…The D / G value varies in range of 1.7 to 2.7 which is close to the D / G value of 2D-CNW features previously reported in the literature [9,19,20]. This may be due to the enhancement in atomic arrangement as a result of the removal of weak C-C bonds which contribute to the disorder in the film structure.…”

“…Further increment of P rf to 80 W renders increase of the wall-to-wall distance and the distribution of the network vertical sheetlike nanostructures as observed in Figure 1(e). At P rf of 100 W, it is deduced that the effective ion bombardment increases the kinetic energy of active species which leads to faster growth rate of secondary wavy-like structures [9]. Such intriguing free standing vertically oriented wall structures offer greater active surface area for materials functionalization, which can provide effective electron pathways and thus can be good candidates as ideal photoelectrode for PEC application.…”

“…The Raman spectra of the as-fabricated thin films reveal four major peaks at around 1350, 1590, 2700, and 2940 cm −1 which can be assigned to D, G, 2D, and D + G bands, respectively. The G band is accompanied by a shoulder peak assigned to D band at 1620 cm −1 while a D + D shoulder peak can be found at around 2480 cm −1 [9]. The calculated FWHM, peak positions for different bands, and D / G ratios for the corresponding spectra of the films are summarized in Table 1.…”

Flipping growth orientation of nanographitic structures by plasma enhanced chemical vapor deposition

“…Since then, several groups have explored the growth of VGNs on catalytic as well as non-catalytic metal / dielectric surfaces using various plasma based techniques such as microwave PECVD, dc plasma discharge, ICP-plasma and thermal plasma jet systems. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] In an excellent review, Bo et al 11 summarized the influence of various key process parameters on the synthesis and growth model for NGSs on various types of substrates. In spite of several existing reports, herein we note that, still there is no unique theory that could unveil the atomistic growth mechanism and give a prescription to optimize the process parameters for a given plasma source.…”