1981
DOI: 10.1016/0022-3093(81)90171-x
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Density and microhardness of GeSbSe glasses

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Cited by 84 publications
(30 citation statements)
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“…Due to chemical ordering, features such as extrema or a change in slope or kink [10][11][12][13][14][15] occur for the various properties at the so called tie line or stoichiometric compositions at which the glass structure is made up of cross-linked structural units consisting of heteropolar bonds only. The tie line compositions, where the features seen have chemical thresholds of the system [16,17].…”
Section: Introductionmentioning
confidence: 99%
“…Due to chemical ordering, features such as extrema or a change in slope or kink [10][11][12][13][14][15] occur for the various properties at the so called tie line or stoichiometric compositions at which the glass structure is made up of cross-linked structural units consisting of heteropolar bonds only. The tie line compositions, where the features seen have chemical thresholds of the system [16,17].…”
Section: Introductionmentioning
confidence: 99%
“…Ge-Sb-Se glasses are one of the famous chalcogenide semiconductors, which are attractive candidates for applications requiring low transmission losses, as transparent materials to infrared radiation in the 2-16 mm range [4]. The composition dependence of the physical properties of GeSb-Se glasses has been extensively studied considering the effect of metal-chalcogenide replacement such as Ge-Se on their electrical properties [5,6], optical and thermal properties [7] heat capacity [8] and density and microhardness [9], or Sb-Se replacement on their electrical and optical properties [1]. Besides, the effect of metal-metal replacement (Ge-Sb) on their optical and electrical properties has been considered [10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore it is expected that T g to decrease with increasing of Ga concentration in the studied film compositions. Since T g reflects the rigidity of the lattice [47] thus, it is expected that the rigidity of the lattice of the studied system decreases with increasing Ga content in the studied system.…”
Section: Temperature Dependence Of the Threshold Switching Voltagev Thmentioning
confidence: 98%