1989
DOI: 10.1149/1.2096681
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Densification of Porous Materials by Chemical Vapor Infiltration

Abstract: A mathematical model that describes the combined diffusion and reaction of trichloromethylsilane in a porous preform under typical chemical vapor infiltration (CVI) conditions is presented. The model utilizes a single pore to demonstrate the importance of the pore geometry, totalgaseous pressure, temperature, and imposed temperature gradient on the degree of achieved densification. By focusing attention on a single pore, it is possible to account for changes in the pore shape that occur during deposition of si… Show more

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Cited by 62 publications
(41 citation statements)
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References 16 publications
(57 reference statements)
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“…And the fourth computation was performed using the complete model Eqs. (1)(2)(3)(4)(5)(6). The computations were carried out for the following operating conditions: p a ¼ 10; 000 Pa; T ¼ 1250 K; C a ðMTSÞ ¼ 0:9; C a ðHClÞ ¼ 0: Table 1 shows relative values of infiltration times for process within the bundles (t f ) and in the inter-bundle space (t b ) and final average porosity within the bundles ðj Sf Þ; in the inter-bundle space ðj Sb Þ and total porosity ðj S Þ: The latter values are averaged over the preform thickness: j Sn ¼ ð1=LÞ R L 0 j 3n dx: All the quantities are presented in Table 1 in the form of ratios to the respective values obtained in computation (1).…”
Section: Computational Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…And the fourth computation was performed using the complete model Eqs. (1)(2)(3)(4)(5)(6). The computations were carried out for the following operating conditions: p a ¼ 10; 000 Pa; T ¼ 1250 K; C a ðMTSÞ ¼ 0:9; C a ðHClÞ ¼ 0: Table 1 shows relative values of infiltration times for process within the bundles (t f ) and in the inter-bundle space (t b ) and final average porosity within the bundles ðj Sf Þ; in the inter-bundle space ðj Sb Þ and total porosity ðj S Þ: The latter values are averaged over the preform thickness: j Sn ¼ ð1=LÞ R L 0 j 3n dx: All the quantities are presented in Table 1 in the form of ratios to the respective values obtained in computation (1).…”
Section: Computational Resultsmentioning
confidence: 99%
“…Chemical vapor infiltration (CVI) is an advanced technique for production of CMC [1,2]. This method is based on deposition of the ceramic matrix on the heated fibers by chemical decomposition of gaseous precursors infiltrating through a fibrous reinforcing substrate or ''preform''.…”
Section: Introductionmentioning
confidence: 99%
“…The alternating SiC/carbon layers were produced by CVI of two different reactions: the decomposition of methyltrichlorosilane (MTS) in the presence of hydrogen; and the decomposition of propylene in hydrogen, respectively. There is also an excellent opportunity to model these processes with the intent at gaining better control of the CVI process [18].…”
Section: Historical Highlightmentioning
confidence: 99%
“…A constant inlet mass flow rate of gaseous precursors and outlet pressure of 1 atm are maintained in the ORNL process (9). This is appropriate since mass and energy balances reach equilibrium much faster than deposition of solid on the pore surface (6). Consequently, the pressure drop across the preform, the so-called back pressure, increases.…”
Section: Model Developmentmentioning
confidence: 99%