2006
DOI: 10.1016/j.jeurceramsoc.2005.03.253
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Densification of liquid phase sintered silicon carbide

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Cited by 99 publications
(43 citation statements)
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References 17 publications
(22 reference statements)
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“…Generally, the conventional solid state sintering requires extremely high temperatures up to 2200°C and long sintering time to achieve full densification. 7,8) It is well known that high temperature and longtime sintering may cause the grain growth phenomenon that will eventually detract the mechanical properties of the final sintered product. With regard to particle size distributions (PSD), earlier researchers have suggested using mono-sized powders of narrow particle size distribution in producing uniform, dense and fine-grained microstructure.…”
Section: Introductionmentioning
confidence: 99%
“…Generally, the conventional solid state sintering requires extremely high temperatures up to 2200°C and long sintering time to achieve full densification. 7,8) It is well known that high temperature and longtime sintering may cause the grain growth phenomenon that will eventually detract the mechanical properties of the final sintered product. With regard to particle size distributions (PSD), earlier researchers have suggested using mono-sized powders of narrow particle size distribution in producing uniform, dense and fine-grained microstructure.…”
Section: Introductionmentioning
confidence: 99%
“…Al, Fe, Ca) present in the initial powder. 24) Amorphous silicate phases, as well as Y 2 O 3 , act as sintering aids, accelerating composite sintering through a mechanism similar to liquidphase sintering. The sample grain size decreased quickly with increasing SiC content, since the SiC particles allow pinning, which suppressed alumina grain growth.…”
Section: Damage and Wear Resistancementioning
confidence: 99%
“…The use of yttria or other rare earth oxides and Al 2 O 3 or AlN as sintering additives, which form together with the SiO 2 existing on the surface of the starting SiC-powder, a liquid phase during the sintering, promotes the densication and microstructural development [5,6]. Liquid phase sintering allows densication of SiC at temperatures close to 1900…”
Section: Introductionmentioning
confidence: 99%
“…However, a major problem associated with sintering of silicon carbide in the presence of oxide additives is the reaction between the silicon carbide and the oxides. The major weight loss in the SiCAl 2 O 3 Y 2 O 3 system during sintering is a result of the formation of gaseous CO, SiO, Al 2 O, and Al [5].…”
Section: Introductionmentioning
confidence: 99%