Dense dislocations induced ductile SnTe thermoelectric semiconductor over a wide range of temperatures

Yang, Houjiang; Huang, Xiege; Duan, Bo; Wu, Luoqi; Wang, Hongtao; Feng, Xiaobin; Jiang, Maoyuan; Li, Guodong; Zhou, Ling; Zhai, Pengcheng; Zhang, Qingjie

doi:10.1016/j.jmst.2022.11.003

Cited by 16 publications

(4 citation statements)

References 33 publications

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“…In addition, Figure 5 d reveals dislocations have a positive effect on ductility enhancement. Yang et al [ 69 ] performed uniaxial compression tests on SnTe at different temperatures ranging from room temperature to 673K and found that the engineering compressive strain increased dramatically from 7.5% to 42%. Through TEM and first-principle calculations, it is found that there are considerable pre-existing dislocations in the grains of SnTe after preparation, as shown in Figure 5 g. During the compression test at room temperature, the pre-existing dislocations move locally and from slip bands leading the large deformability.…”

Section: Toughening Strategies Of Thermoelectric Materialsmentioning

confidence: 99%

“…Copyright 2012 Elsevier); ( d ) Mechanical and thermoelectric properties of Mg 2 (Si 0.3 Sn 0.7 ) 0.99 Sb 0.01 improved by graphene oxide nanosheets and multi-walled carbon nanotubes [ 68 ]; ( e , f ) Crack propagates: pulling out and crack bridging (Reprinted with permission from ref [ 68 ]. Copyright 2021 Elsevier); ( g ) Dense dislocations loops in SnTe [ 69 ]; ( h ) Stress-strain curves for compression tests of SnTe at different temperature [ 69 ]; ( i ) The deformation mechanisms in SnTe samples at different temperatures (Reprinted with permission from ref [ 69 ]. Copyright 2023 Elsevier); ( j ) The digital photograph of PEDOT:PSS/Te–NWs (PP/T) hybrid fibers [ 70 ]; ( k ) SEM images of PP/T hybrid fibers [ 70 ]; ( l ) Stress-strain curves of PP/T before and after post-treatment.…”

Section: Figurementioning

confidence: 99%

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Toughening Thermoelectric Materials: From Mechanisms to Applications

Feng

Cao

et al. 2023

IJMS

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With the tendency of thermoelectric semiconductor devices towards miniaturization, integration, and flexibility, there is an urgent need to develop high-performance thermoelectric materials. Compared with the continuously enhanced thermoelectric properties of thermoelectric materials, the understanding of toughening mechanisms lags behind. Recent advances in thermoelectric materials with novel crystal structures show intrinsic ductility. In addition, some promising toughening strategies provide new opportunities for further improving the mechanical strength and ductility of thermoelectric materials. The synergistic mechanisms between microstructure-mechanical performances are expected to show a large set of potential applications in flexible thermoelectric devices. This review explores enlightening research into recent intrinsically ductile thermoelectric materials and promising toughening strategies of thermoelectric materials to elucidate their applications in the field of flexible thermoelectric devices.

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Section: Toughening Strategies Of Thermoelectric Materialsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Toughening Thermoelectric Materials: From Mechanisms to Applications

Feng

Cao

et al. 2023

IJMS

Self Cite

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“…By the introduction of microstructure defects, the average free path of phonons can be effectively reduced, thereby reducing the lattice thermal conductivity. Point-defect, dislocations, , grain boundaries, , and nanoprecipitates have been shown to be effective in enhancing phonon scattering. In addition, lattice softening caused by weakened interatomic binding force can also significantly reduce sound velocity, thereby reducing lattice thermal conductivity .…”

Section: Introductionmentioning

confidence: 99%

Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature

Liu,

Guo,

Deng

2024

Inorg. Chem.

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SnTe is an environmentally friendly medium-temperature thermoelectric material, but its inherent low power factor (PF) and high lattice thermal conductivity severely limit its application. In this study, based on the fact that Mn doping can induce band convergence, the high-pressure and high-temperature (HPHT) synthesis method was used to optimize the sample preparation and shorten the synthesis cycle to 30 min. The results show that the Sn 0.93 Mn 0.10 Te sample achieves the maximum PF value of 34.00 μW cm −1 K −2 at 775 K and PF ave value of 21.36 μW cm −1 K −2 between 300−875 K. Microstructure analysis shows that the highpressure synthesis method introduces abundant grain boundaries, various grain sizes, multiple defects, and pore structures into the sample. These microscopic crystal structures can effectively scatter phonons and lower the lattice thermal conductivity. The modification of these micromorphologies results in the Sn 0.92 Mn 0.11 Te sample attaining a minimum lattice thermal conductivity of 0.45 W m −1 K −1 at 625 K. The thermoelectric figure of merit (zT) of sample Sn 0.92 Mn 0.11 Te reaches a maximum value of 1.1 at 775 K, and the zT ave reaches 0.63 in the range of 300−875 K. This study indicates that the synergistic effect of Mn element doping and microstructure modification can effectively optimize the thermoelectric transport performance of SnTe materials.

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“…The current challenges facing humanity include energy shortage and the greenhouse effect, necessitating the development of new energy sources and the protection of the Earth’s environment. − When utilizing energy sources like coal, oil, and natural gas, a significant amount of heat is wasted in the form of waste heat. − Therefore, the recycling and utilization of these energy sources have become crucial issues. Traditional refrigeration materials have detrimental effects on the ozone layer and the environment. − Hence, there is a need to develop new refrigeration technologies. − Thermoelectric materials have the capability to convert heat energy and electric energy into each other, enabling the recycling and reuse of energy from sources such as automobile exhaust, industrial waste heat, and geothermal energy. − They also offer rapid, precise, eco-friendly, and noise-free cooling methods. − Thus, thermoelectric materials provide potential solutions to the energy crisis and environmental problems we face today. , …”

Section: Introductionmentioning

confidence: 99%

High ZT Value and Ultralow Lattice Thermal Conductivity Induced by Edge Dislocations Coupled with the Superlattice Structure in Ag-Doped BST Alloy

Liu,

Tang,

Tao

et al. 2023

Crystal Growth & Design

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This study investigates the effect of Ag doping on the thermoelectric properties of the BiSbTe3 (BST) alloy. High-quality BST alloys were prepared by using the NaCl solvent method, and the most promising BST(NaCl)6 sample was chosen for Ag doping experiments. The experimental results demonstrate that Ag doping significantly enhances the crystal quality and density of the alloy, leading to increased material mobility, reduced resistivity, and improved power factor. Ag doping also introduces numerous edge dislocations to the material. Additionally, highly doped samples contain Ag2Te and BST superlattice structures, which further intensify the scattering of heat transfer phonons, consequently decreasing the lattice thermal conductivity significantly. The highly Ag doped samples exhibit a remarkably low lattice thermal conductivity, reaching as low as 0.3 W m–1 K–1 at 375 K. These modifications greatly enhance the thermoelectric efficiency of the Ag-doped samples, leading to increased ZT values. Particularly, samples with an Ag doping level of x = 0.01 exhibit a maximum ZT value of 1.38 at 425 K, and an average ZT value of 1.2 within the temperature range of 300–450 K. These findings underscore the wide-ranging application potential of Ag-doped BiSbTe3 alloys in room-temperature refrigeration and power generation. The study provides crucial insights into the characteristics of Ag-doped BiSbTe3 alloys while also contributing to the optimization of thermoelectric material design and the advancement of sustainable energy conversion technologies.

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Dense dislocations induced ductile SnTe thermoelectric semiconductor over a wide range of temperatures

Cited by 16 publications

References 33 publications

Toughening Thermoelectric Materials: From Mechanisms to Applications

Toughening Thermoelectric Materials: From Mechanisms to Applications

Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature

High ZT Value and Ultralow Lattice Thermal Conductivity Induced by Edge Dislocations Coupled with the Superlattice Structure in Ag-Doped BST Alloy

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