Demonstration of the threshold-switching memory devices using EMIm(AlCl3)Cl and ZnO for neuromorphic applications
Dongshin Kim,
Ik-Jyae Kim,
Jang-Sik Lee
Abstract:The threshold-switching behaviors of the synapses lead to energy-efficient operation in the neural computing system. Here, we demonstrated the threshold-switching memory devices by inserting the ZnO layer into the ionic synaptic devices. The EMIm(AlCl3)Cl is utilized as the electrolyte because its conductance can be tuned by the charge states of the Al-based ions. The redox reactions of the Al ions in the electrolyte can lead to the analog resistive switching characteristics, such as excitatory postsynaptic cu… Show more
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