Conference on Lasers and Electro-Optics 2018
DOI: 10.1364/cleo_si.2018.sm3b.3
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Demonstration of Long-Term Thermal Stability of a Silicon-Organic Hybrid (SOH) Modulator at 85°C

Abstract: We demonstrate highly stable silicon-organic hybrid (SOH) modulators fulfilling Telcordia standards for high-temperature storage. We show error-free 40 Gbit/s signaling with drive voltages of 1.65 Vpp using a device stored at 85°C for 2700 hours.

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Cited by 1 publication
(2 citation statements)
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“…In addition, our devices feature a voltage-length product of only UπL = 0.9 Vmm, which is well below that of packaged SiP devices that were previously demonstrated. When combined with recent progress in improving thermal stability of organic EO materials [35] and of SOH modulators [36] as well as with novel technologies for hybrid photonic integration [37], we believe that our demonstration represents an important step in bringing SOH modulators from proof-of-concept experiments to deployment in laboratory and commercial environments.…”
Section: Introductionmentioning
confidence: 77%
See 1 more Smart Citation
“…In addition, our devices feature a voltage-length product of only UπL = 0.9 Vmm, which is well below that of packaged SiP devices that were previously demonstrated. When combined with recent progress in improving thermal stability of organic EO materials [35] and of SOH modulators [36] as well as with novel technologies for hybrid photonic integration [37], we believe that our demonstration represents an important step in bringing SOH modulators from proof-of-concept experiments to deployment in laboratory and commercial environments.…”
Section: Introductionmentioning
confidence: 77%
“…In our experiments, we demonstrate generation of intensity modulated signals with line rates of up to 80 Gbit/s as well as of QPSK and 16QAM signals with symbol rates up to 64 GBd and lines rates up to 160 Gbit/s, respectively. In combination with recent progress regarding EO material stability [36] and novel technologies for hybrid photonic integration [37], our concept builds upon the intrinsic efficiency and performance advantages demonstrated for die-level SOH devices and allows to exploit them on the level of electrically packaged communication modules.…”
Section: Discussionmentioning
confidence: 99%