Demonstration of L-band DP-QPSK transmission over FSO and fiber channels employing InAs/InP quantum-dash laser source

Shemis, M. A.; Khan, Muhammad Talal Ali; Alkhazraji, E.; Ragheb, Amr; Esmail, Maged Abdullah; Fathallah, Habib; Qureshi, Khurram Karim; Alshebeili, Saleh A.

doi:10.1016/j.optcom.2017.10.080

Cited by 13 publications

(9 citation statements)

References 20 publications

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“…Self-assembled InAs nanostructures (NSs) formed by Stranski-Krastanow (SK) growth mode on InP (001) substrates have received renewed interest for 1.55 lm optical telecom devices. Already, lasers, 1 mode-locked lasers, 2 and semiconductor optical amplifiers (SOA) 3 have been achieved with improved performances (see the recent review in Ref. 4).…”

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confidence: 99%

“…First, we report in Fig. 2(c) the energy density E/V, for a particular NS volume, of 100 nm 3 . A c (114)B of 49.0 meV/A 2 is considered.…”

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confidence: 99%

“…The sizes calculated before and after the shape transition are close to the experimental data (Table I) for wires and islands, respectively. Indeed, for c (114)B of 54.0 meV/A 2 , the NS sizes drastically change from h ES ¼ 5 nm, w ES ¼ 28 nm, and L ES ¼ 450 nm to h ES ¼ 9 nm, w ES ¼ 54 nm and L ES ¼ 155 nm, while the volume only changes from 32 000 nm 3 to 35 000 nm 3 , corresponding, respectively, to the end of the surface driven regime and the beginning of the strain driven regime. For c (114)B of 49.0 meV/A 2 , the transition is smoother and occurs at about 2500 nm 3 (h ES ¼ 3 nm, w ES ¼ 17 nm and L ES ¼ 100 nm).…”

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confidence: 99%

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Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate

Ponchet

Pédesseau

Corre

et al. 2019

Applied Physics Letters

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The shape of InAs nanostructures formed by molecular beam epitaxy on a (001) InP substrate in the Stranski-Krastanow growth mode is studied. A transition from wires to round-shaped islands is observed as a function of the amount of InAs deposited. It is attributed to the non-equivalent energies of the A and B facets existing in zinc blende materials (facets along [1 10] and [110], respectively). This surface energy anisotropy is considered to determine the nanostructure equilibrium shape from the balance between the elastic energy and the surface energy. At low volumes, the most energetically favorable shape is the wire-like shape, while at high volumes, the equilibrium shape is the island-like shape. The calculated sizes for which the shape changes are in good agreement with experimental sizes. The low lattice mismatch and the low surface energy of (114)A InAs facets around 41 meV/A 2 , as obtained from density functional theory calculations, enhance this effect in the InAs/InP system.

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mentioning

confidence: 99%

“…First, we report in Fig. 2(c) the energy density E/V, for a particular NS volume, of 100 nm 3 . A c (114)B of 49.0 meV/A 2 is considered.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

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Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate

Ponchet

Pédesseau

Corre

et al. 2019

Applied Physics Letters

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“…This value was shown to be <0.1 W/cm 2 IEC 60825-1 standard limit for Class 1 laser classification for distances less than 100 m, thus qualifying the Qdash LD operation to be eye-safe under all conditions of normal use. Soon after, 44 Gbaud (176 Gb/s) DP-QPSK was successfully demonstrated in [80], [81], by employing SIL on the same Qdash LD in an extended indoor FSO link of a length of 10 m, showing a receiver sensitivity of −12 dBm to attain BER below FEC limit of 3.8 ×10 −3 .…”

Section: A L-band Fsomentioning

confidence: 99%

“…40 GHz and 80 GHz from the odd and sidebands, respectively. The 40 (80) GHz MMW was then transmitted through a 50 (25) km followed by a 20 m WL link comprised of two horn antennas. As such, both transmission links exhibited a BER < FEC threshold of 3.8 × 10 −3, indicating successful communication.…”

Section: A Transmission With Wireless Linkmentioning

confidence: 99%

Towards InAs/InP Quantum-Dash Laser-Based Ultra-High Capacity Heterogeneous Optical Networks: A Review

Khan

2022

IEEE Access

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The unprecedented increase in internet traffic witnessed in the last few years has pushed the community to explore heterogeneous optical networks, including free-space-optics (FSO) communication, radio-over-fiber (RoF), wireless (WL), and their convergent hybrid technologies. This stems from the possibility of seamless integration with the existing fiber-optic backhaul networks while providing muchneeded flexibility and scalability. Moreover, efficient optical transceivers, particularly light sources in the form of semiconductor laser diodes, are key in meeting the future demands of the next generation green optical access networks. In this respect, InAs/InP Quantum-dash (Qdash) nanostructure-based lasers have shown tremendous progress in the past few years with applications spanning from a wavelength division multiplexed (WDM) optical communication to recently, millimeter-wave (MMW) over fiber networks. This waveguide-based laser diode (LD) has demonstrated a rule-changing broad multi-wavelength lasing emission, thanks to the inherent and wavelength-tunable wide gain profile offered by the Qdash activegain region covering S-to U-band regions. Moreover, exploiting mode-locking and optical injection locking assisting techniques, highly coherent InAs/InP Qdash comb laser source at 1550 nm and 1610 nm have been respectively realized, thus opening a new paradigm for their potential applications in green optical and 5G access networks. In this work, progress on utilizing InAs/InP Qdash LD, supporting several sub-carriers, in energy-efficient ∼1550 nm and ∼1610 nm WDM heterogeneous optical networks with single-modefibers (SMF) has been highlighted, exhibiting aggregate data rates of 11 -12 Tb/s by employing a single device, and accommodating PAM4 and higher-order 32-QAM modulation schemes. Moreover, the recent deployment of this LD in the RoF domain, targeting MMW frequency band, for convergent fiber-wireless networks, is also summarized, with demonstrated 25 to >100 GHz MMW beat-tone frequency generates and transmission of up to 24 Gb/s.

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Design of a 10 GHz optical wireless communication link using low power C-band laser diode

et al. 2021

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Demonstration of L-band DP-QPSK transmission over FSO and fiber channels employing InAs/InP quantum-dash laser source

Cited by 13 publications

References 20 publications

Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate

Shape transition in InAs nanostructures formed by Stranski-Krastanow growth mode on InP (001) substrate

Towards InAs/InP Quantum-Dash Laser-Based Ultra-High Capacity Heterogeneous Optical Networks: A Review

Design of a 10 GHz optical wireless communication link using low power C-band laser diode

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