Demonstration of injection locking a diode laser using a filtered electro-optic modulator sideband

Shahriar, M. S.; Turukhin, A.; Liptay, Thomas J.; Tan, Yan‐Xi; Hemmer, Philip

doi:10.1016/s0030-4018(00)00972-x

Cited by 15 publications

(9 citation statements)

References 13 publications

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“…It is usually necessary to separate the frequency-shifted radiation from the unshifted carrier wave. While trivial with an AOM, carrier extraction is less straightforward when the modulation frequency merits use of an EOM, and several techniques have been developed for this purpose [7,8,9].…”

Section: Introductionmentioning

confidence: 99%

“…Established methods generally operate by separating light according to its wavelength, and have two major drawbacks. Firstly, interferometric methods require sophisticated and costly apparatus to stabilize a resonant cavity or other optical path with sub-wavelength accuracy [8,9] and a vibrationfree environment is essential. Secondly, wavelength-dependent techniques are inappropriate if rapid changes in modulation frequency are to be accommodated.…”

Section: Introductionmentioning

confidence: 99%

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Actively stabilized wavelength-insensitive carrier elimination from an electro-optically modulated laser beam

et al. 2012

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We demonstrate a simple and robust technique for removal of the carrier wave from a phase-modulated laser beam, using a noninterferometric method that is insensitive to the modulation frequency and instead exploits the polarization dependence of electro-optic modulation. An actively stabilized system using feedback via a liquid crystal cell yields long-term carrier suppression in excess of 28 dB at the expense of a 6.5 dB reduction in sideband power.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Actively stabilized wavelength-insensitive carrier elimination from an electro-optically modulated laser beam

et al. 2012

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“…6) leads to high power loss and difficult alignment. Third, a direct optical modulation by electro-optical modulator (EOM) 8,9 or a fiber electrooptical modulator (FEOM) 10 are simple ways to produce Raman lasers. However, different sidebands and the carrier cannot be spatially separated without an optical filter.…”

mentioning

confidence: 99%

Note: Generation of Raman laser beams based on a sideband injection-locking technique using a fiber electro-optical modulator

Xue

Feng

Wang

et al. 2013

Review of Scientific Instruments

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Two phase-coherent Raman laser beams with a frequency offset of 6.835 GHz were generated by sideband injection-locking technique. A master diode laser was phase-modulated at 6.835 GHz by a fiber electro-optic modulator. A slave diode was injection-locked to the -1 sideband of the phase-modulated beam, and another diode was locked to the master laser carrier. This method produced stable and spatially separated Raman lasers with a large frequency shift range (>180 MHz). The relative linewidth of these two beams was ∼1 Hz, and the unwanted carrier mode was suppressed down to -24 dB. Stimulated Raman transitions and Ramsey fringes were driven by Raman lasers in a cold atomic beam.

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“…Alternatively, in an all-optical loop such beams can be generated in a simpler way. After modulation using an electro-optic modulator (EOM) or an acousto-optical modulator (AOM) or an Fabry-Perot (FP) laser diode, one sideband of the laser source is used to lock a slave laser by injection seeding [6,7,8,9]. This way, the slave laser is optically phase locked to the master laser with a frequency difference determined by the modulation frequency.…”

mentioning

confidence: 99%

“…But using these methods, because of the low efficiency of such modulators, the locked slave laser would have an unwanted oscillating whose frequency is the same as the carrier of the master laser. In order to remove this unwanted mode, there was a suggestion to use a locked filtering cavity or to decrease the seed power [6,7,8]. However, the filtering cavity makes the laser system complicated while the decreased power reduces the reliability and the locking range of the injection locking.…”

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confidence: 99%

Optical phase locking with a large and tunable frequency difference based on a vertical-cavity surface-emitting laser

Chen

Lin

et al. 2008

Opt. Lett.

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We present a novel technique to phase-lock two lasers with controllable frequency difference. In our setup, one sideband of a current modulated Vertical-Cavity Surface-Emitting Laser (VCSEL) is phase locked to the master laser by injection seeding, while another sideband of the VCSEL is used to phase lock the slave laser. The slave laser is therefore locked in phase with the master laser, with a frequency difference tunable up to about 35 GHz. The sideband suppression rate of the slave laser is more than 30dB at 30 µW seed power. The heterodyne spectrum between master and slave has a linewidth of less than 1 Hz. A narrow linewidth spectrum of coherent population trapping in rubidium is achieved using such beams.PACS numbers: OCIS 020. 1670, 140.7260, 140.3550, 020.3320. There have been a number of reports related to atomic coherence effects, such as atomic clocks based on coherent population trapping [1,2], electromagnetically induced transparency [3], and Raman cooling [4]. In these experiments, the requirement of the relative frequency stability of two lasers exceeds that of absolute frequency by far. A tunable frequency difference of several GHz is necessary and can be obtained by stabilizing one laser to the other in a heterodyne optical phase-locked loop. In this approach, the beat note between the two lasers is detected and phase-locked to a local oscillator by an electronic feedback loop. The requirements to lock the laser are a phase locked loop operating at the offset frequency, typically several GHz for alkali atoms in the ground-state, and a wide-bandwidth feedback [5].Alternatively, in an all-optical loop such beams can be generated in a simpler way. After modulation using an electro-optic modulator (EOM) or an acousto-optical modulator (AOM) or an Fabry-Perot (FP) laser diode, one sideband of the laser source is used to lock a slave laser by injection seeding [6,7,8,9]. This way, the slave laser is optically phase locked to the master laser with a frequency difference determined by the modulation frequency. But using these methods, because of the low efficiency of such modulators, the locked slave laser would have an unwanted oscillating whose frequency is the same as the carrier of the master laser. In order to remove this unwanted mode, there was a suggestion to use a locked filtering cavity or to decrease the seed power [6,7,8]. However, the filtering cavity makes the laser system complicated while the decreased power reduces the reliability and the locking range of the injection locking.In this paper, we demonstrated a convenient approach to produce optical phase locked laser beams of high frequency purity, large frequency difference and wide dy- * Corresponding author: xuzongchen@pku.edu.cn FIG. 1: Experimental setup for producing phase-coherent laser beams with large frequency difference and obtaining CPT spectrum of the 5S 1/2 − 5P 3/2 transition of 87 Rb using such beams. ISO: isolator; λ/2: half-wave plate; PBS: polarizing beam splitter; BS: beam splitter; NDF: neutral density filter; λ/...

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Demonstration of injection locking a diode laser using a filtered electro-optic modulator sideband

Cited by 15 publications

References 13 publications

Actively stabilized wavelength-insensitive carrier elimination from an electro-optically modulated laser beam

Actively stabilized wavelength-insensitive carrier elimination from an electro-optically modulated laser beam

Note: Generation of Raman laser beams based on a sideband injection-locking technique using a fiber electro-optical modulator

Optical phase locking with a large and tunable frequency difference based on a vertical-cavity surface-emitting laser

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