Demonstration of high-responsivity epitaxial β-Ga<sub>2</sub>O<sub>3</sub>/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

Kalra, Anisha; Vura, Sandeep; Rathkanthiwar, Shashwat; Muralidharan, R.; Raghavan, Srinivasan; Nath, Digbijoy N.

doi:10.7567/apex.11.064101

Cited by 93 publications

(56 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared to the pure Ag and Au NP devices, the Ag 4 Au 3 alloy exhibited a higher photoresponse. For instance, the R , D , and EQE of Ag 4 Au 3 were 112 A W −1 , 2.4 × 10 12 jones, and 3.6 × 10 4 %, respectively, at 0.03 mW mm −2 of illumination power, which were higher than those of previously reported GaN-based UV photodetectors with Ag NPs [ 26 ], with various GaN films [ 40 , 44 – 48 ], and with graphene layers [ 49 – 51 ] as summarized in Table 1 . However, the Ag 3.5 Au 3.5 and Ag 3 Au 4 devices exhibited somewhat moderate photoresponses with decreasing trend as the Au ratio was increased.…”

Section: Resultsmentioning

confidence: 63%

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

et al. 2020

View full text Add to dashboard Cite

HIGHLIGHTS • Enhancement of UV photoresponse by the incorporation of various plasmonic nanoparticles in the detector architecture. • Detailed explanation for the photocurrent enhancement mechanism by the finite-difference time domain (FDTD) simulation and strong plasmon absorption. • Systematic comparison and demonstration of the superior photoresponse of homogeneously alloyed AgAu nanoparticles as compared to the monometallic nanoparticles. ABSTRACT Very small metallic nanostructures, i.e., plasmonic nanoparticles (NPs), can demonstrate the localized surface plasmon resonance (LSPR) effect, a characteristic of the strong light absorption, scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons. The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors. In this work, significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture. Various size and elemental composition of monometallic Ag and Au NPs, as well as bimetallic alloy AgAu NPs, are fabricated on GaN (0001) by the solid-state dewetting approach. The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs, resulting in the highly enhanced photoresponsivity of 112 A W −1 , detectivity of 2.4 × 10 12 Jones and external quantum efficiency of 3.6 × 10 4 % with the high Ag percentage of AgAu alloy NPs at a low bias of 0.1 V. The AgAu alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms, respectively. The improved photoresponse with the AgAu alloy NPs is correlated with the simultaneous effect of strong plasmon absorption and scattering, increased injection of hot electrons into the GaN conduction band and reduced barrier height at the alloy NPs/GaN interface.

show abstract

Section: Resultsmentioning

confidence: 63%

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Apart from the above work, direct combination of Ga 2 O 3 with GaN can lead to sensitive solar‐blind DUVPDs as well . For instance, Jaiswal et al recently tried to deposit Ga 2 O 3 on GaN epilayers using the microwave radiation technique.…”

Section: Ga2o3mentioning

confidence: 99%

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

385

261

View full text Add to dashboard Cite

Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

show abstract

“…Some groups have also grown gallium oxide on GaN templates owing to their smaller lattice mismatch and the advancement in GaN based thin film technology. [ 179–181 ] Weng et al. have reported the growth of Ga 2 O 3 by furnace oxidation of a GaN film.…”

Section: Current Scenario In the Field Of Gallium Oxide Pds—materials Designmentioning

confidence: 99%

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Kaur

Kumar

2021

Advanced Optical Materials

265

153

View full text Add to dashboard Cite

With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill‐effects on humans. This requires detection systems with suitable spectral response to the “invisible to the naked eye” radiation leaks with utmost sensitivity and swiftness. State of the art deep‐UV photodetectors based on the wide bandgap material gallium oxide have achieved responsivities up to few hundred A W−1 while the minimum response time achieved is few hundred nanoseconds. However, due to the trade‐off between these two key parameters, the ultimate performance of the photodetectors remains inadequate. The focus here is to give a thorough review of the gallium oxide based photodetectors, their recent progress and future prospects. This review highlights the fundamental physics and the key parameters such as dark current, responsivity, and response time with their dependence on the material properties. Exploration of the reasons behind current scenario in the field of gallium oxide is comprehensively and critically analyzed. The key challenges which limit device performance and inhibit the realization of real‐world practical detectors are also described. The lacunae currently plaguing the field is also discussed with possible remedial solutions.

show abstract

Demonstration of high-responsivity epitaxial β-Ga₂O₃/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

Cited by 93 publications

References 33 publications

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Contact Info

Product

Resources

About

Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

Cited by 93 publications

References 33 publications

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

Contact Info

Product

Resources

About

Demonstration of high-responsivity epitaxial β-Ga₂O₃/GaN metal–heterojunction-metal broadband UV-A/UV-C detector