Abstract:We disclosed HfO 2 -based dielectric of superb electrical properties on p-type Si 0.8 Ge 0.2 substrate using an interfacial layer (IL) formed by trimethylaluminum (TMA) pre-treatment and Al scavenger. Our results revealed that the interface trap density (D it ) value and the gate leakage current (J G ) could be improved about 60 times and 100 times by tuning the gate electrode composition without sacrificing equivalent oxide thickness (EOT) performance. The mechanism underlying the D it improvement of the SiGe… Show more
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