Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas

Shojaei, Borzoyeh; O’Malley, P.; Shabani, Javad; Roushan, P.; Schultz, Brian D.; Lutchyn, Roman M.; Nayak, Chetan; Martinis, John M.; Palmstrøm, Christopher J.

doi:10.1103/physrevb.93.075302

Cited by 26 publications

(22 citation statements)

References 43 publications

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“…The change with electron density of the SOI extends from ∆ so = 0.55 meV up to ∆ so = 4.9 meV. These values are comparable in magnitude to those observed in InAs quantum wells formed in a number of similar systems [20][21][22][23] . ∆ so maintaining a constant value in the low electron density regime and increasing linearly in the high electron density regime is consistent with it being a weighted average of the values of the splitting energy of each sub-band and there being a larger intrinsic ∆ so in the second sub-band.…”

supporting

confidence: 66%

Spin-Relaxation Mechanisms in InAs Quantum Well Heterostructures

Witt

Pauka²,

Gardner³

et al. 2021

Preprint

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The spin-orbit interaction and spin-relaxation mechanisms of a shallow InAs quantum well heterostructure are investigated by magnetoconductance measurements as a function of an applied top-gate voltage. The data were fit using the Iordanskii-Lyanda-Geller-Pikus model and two distinct transport regimes were identified which correspond to the first and second sub-bands of the quantum well. The spin-orbit interaction splitting energy is extracted from the fits to the data, which also displays two distinct regimes. The different sub-band regimes exhibit different spin-scattering mechanisms, the identification of which, is of relevance for device platforms of reduced dimensionality which utilise the spin-orbit interaction.

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supporting

confidence: 66%

Spin-Relaxation Mechanisms in InAs Quantum Well Heterostructures

Witt

Pauka²,

Gardner³

et al. 2021

Preprint

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“…[ 4,5 ] InX materials are also promising for spintronics [ 6–8 ] because of their strong spin‐orbit interaction and gate‐tunable Rashba coefficients. [ 9–11 ]…”

Section: Introductionmentioning

confidence: 99%

Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle‐Resolved Photoemission Spectroscopy

et al. 2022

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The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces is studied using a combination of density functional theory (DFT) and angle‐resolved photoemission spectroscopy (ARPES). Large‐scale first principles simulations are enabled by using DFT calculations with a machine‐learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. To facilitate direct comparison with ARPES results, a “bulk unfolding” scheme is implemented by projecting the calculated band structure of a supercell surface slab model onto the bulk primitive cell. For all three surfaces, a good agreement is found between DFT calculations and ARPES. For InAs(001), the simulations clarify the effect of the surface reconstruction. Different reconstructions are found to produce distinctive surface states, which may be detected by ARPES with low photon energies. For InAs(111) and InSb(110), the simulations help elucidate the effect of oxidation. Owing to larger charge transfer from As to O than from Sb to O, oxidation of InAs(111) leads to significant band bending and produces an electron pocket, whereas oxidation of InSb(110) does not. The combined theoretical and experimental results may inform the design of quantum devices based on InAs and InSb semiconductors, for example, topological qubits utilizing the Majorana zero modes.

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“…These materials are therefore predicted to have strong spin-orbit interaction (SOI) [1,2] which has been measured experimentally [3]. Moreover, tuning of the Rashba strength by electrostatic gating has been shown for InAs quantum wells [4,5]. Strong and in-situ control over SOI is a necessary ingredient for novel spintronic devices [2,6,7], and strong SOI together with a large g-factor and induced superconductivity are ingredients for a topological superconducting phase [8].…”

mentioning

confidence: 99%

Spin-orbit interaction in a dual gated InAs/GaSb quantum well

et al. 2017

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Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $\beta =$ 28.5 meV$\AA$ and the Rashba coefficient $\alpha$ is tuned from 75 to 53 meV$\AA$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations

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Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas

Cited by 26 publications

References 43 publications

Spin-Relaxation Mechanisms in InAs Quantum Well Heterostructures

Spin-Relaxation Mechanisms in InAs Quantum Well Heterostructures

Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle‐Resolved Photoemission Spectroscopy

Spin-orbit interaction in a dual gated InAs/GaSb quantum well

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