2022
DOI: 10.1016/j.jallcom.2022.165105
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Demonstration of enhanced resistance switching performance of HfO2/WOx-based bilayer devices embedded with Ti nano island array by applying a rapid thermal annealing process

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Cited by 8 publications
(1 citation statement)
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“…Tungsten has a variety of valence states and is also a metal oxide with memristive properties. Many researchers have successfully prepared memristors with tungsten oxide as a insulator layer. As a semiconductor with excellent electrical properties, ZnO has been widely used in thin-film transistors, light-emitting diodes, etc. The heterojunction structure relies on the band modulation to influence the performance of the memristors, and the similarity of the heterojunction structure to the MOS structure makes it more valuable for technical applications. Many teams have successfully prepared heterojunction-structured memristors.…”
mentioning
confidence: 99%
“…Tungsten has a variety of valence states and is also a metal oxide with memristive properties. Many researchers have successfully prepared memristors with tungsten oxide as a insulator layer. As a semiconductor with excellent electrical properties, ZnO has been widely used in thin-film transistors, light-emitting diodes, etc. The heterojunction structure relies on the band modulation to influence the performance of the memristors, and the similarity of the heterojunction structure to the MOS structure makes it more valuable for technical applications. Many teams have successfully prepared heterojunction-structured memristors.…”
mentioning
confidence: 99%