Demonstration of damage-free mask repair using electron beam-induced processes

Liang, Ted; Stivers, Alan R.; Penn, M. J.; Bald, Dan; Sethi, Chetan; Boegli, Volker; Budach, Michael; Edinger, Klaus; Spies, Petra

doi:10.1117/12.557788

Cited by 22 publications

(13 citation statements)

References 7 publications

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“…This situation could be improved with the introduction of a novel electron beam based mask repair tool MeRiT ® MG based on the superior capabilities of Carl-Zeiss' Gemini ® electron beam optics. [2] Since such an e-beam based mask repair tool is essentially based on a small e-beam lithography tool, the excellent resolution can be clearly understood. The high quality electron optics have the striking advantage of delivering inspection and imaging capabilities by using the system in a SEM mode.…”

Section: The E-beam Repair Systemmentioning

confidence: 99%

Phase-shifting photomask repair and repair validation procedure for transparent and opaque defects relevant for the 45nm node and beyond

et al. 2008

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Section: The E-beam Repair Systemmentioning

confidence: 99%

Phase-shifting photomask repair and repair validation procedure for transparent and opaque defects relevant for the 45nm node and beyond

et al. 2008

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“…This is a "luxury' which is not usually available. However, neglecting only the "recoil" momentum (momentum of the bound electron) in equation (3,3), one can solve for the scattering angles from equations (3,3) and (3,4) as: (3,20)…”

Section: Inelastic Collision (Inelastically Rearranged Electrons)mentioning

confidence: 99%

“…As before, the incoming electron supplies the necessary energy of about few e V and scatters off loosing little energy. The incoming electron scatters at a small angle, but the secondary electron moves at an angle close to 90° with respect to the incoming electron as suggested by equation (3,20).…”

Section: ---mentioning

confidence: 99%

Effects of fast secondary electrons to low-voltage electron beam lithography

Bolorizadeh

Joy

2007

J. Micro/Nanolith. MEMS MOEMS

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“…The MeRiT™ MG 45 electron beam mask repair tool utilizes the newest technology available for mask repair providing advantages over other techniques that have already been presented [1,2]. It has been shown that the MeRiT™ MG 45 can deposit material that matches the optical properties of advanced phase shifting material (PSM) masks, filling a large void in existing repair capability [1,3].…”

Section: Introductionmentioning

confidence: 98%

Challenging defect repair techniques for maximizing mask repair yield

Garetto

Oster²,

Waiblinger

et al. 2009

SPIE Proceedings

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In today's economic climate it is critical to improve mask yield as materials, processes and tools are more time and cost involved than ever. One way to directly improve mask yield is by reducing the number of masks scrapped due to defects which is one of the major mask yield reducing factors. The MeRiT™ MG 45, with the ability to repair both clear and opaque defects on a variety of masks, is the most comprehensive and versatile repair tool in production today. The cost of owning multiple repair tools can be reduced and time is saved when fast turnaround is required, especially when more than one defect type is present on a single mask. This paper demonstrates the ability to correct repair errors due to human mistakes and presents techniques to repair challenging production line defects with the goal of maximizing mask repair yield and cycle time reduction. KEYWORDSMeRiT TM MG 45, AIMS TM 45-193i, mask repair, defect repair, electron beam repair, repair yield INTRODUCTIONAs the complexity and cost associated with photolithography masks continues to grow, it is more important than ever to optimize the yield of the mask shop. This saves the money invested in the raw materials of the mask, but more importantly, the time and expense involved with the labor and tool costs required for producing the mask. While much time and effort goes into reducing the number of defects introduced to the mask as it travels through the production line, completely eliminating these defects is impossible and their presence on the final product is a major factor in reducing yield. Therefore it is critical to have excellent defect repair capabilities in order to increase overall mask yield.The ability to successfully repair defects that were previously classified as non-repairable increases the repair yield and leads to an increase in mask yield. The MeRiT™ MG 45 electron beam mask repair tool utilizes the newest technology available for mask repair providing advantages over other techniques that have already been presented [1,2]. It has been shown that the MeRiT™ MG 45 can deposit material that matches the optical properties of advanced phase shifting material (PSM) masks, filling a large void in existing repair capability [1,3]. Nearly unlimited inspection and the ability to return to a repair site multiple times are possible without degradation of the mask's optical properties. This is especially important as challenging defects require more skill to repair so they may be approached conservatively. Even mistakes due to human error can be corrected. In both cases, the result is an increase in mask yield. This paper presents examples of both opaque and clear defect repair and expands on the topic of returning to a repair site in order to further improve mask yield. A MeRiT™ MG 45 installed at a customer site was used to perform all the repairs and analysis was carried out to quantify the repair results with an on-site AIMS™ 45-193i. The ability to perform multiple repair attempts on a single site without degradation of the optica...

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Demonstration of damage-free mask repair using electron beam-induced processes

Cited by 22 publications

References 7 publications

Phase-shifting photomask repair and repair validation procedure for transparent and opaque defects relevant for the 45nm node and beyond

Phase-shifting photomask repair and repair validation procedure for transparent and opaque defects relevant for the 45nm node and beyond

Effects of fast secondary electrons to low-voltage electron beam lithography

Challenging defect repair techniques for maximizing mask repair yield

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