Demonstration of a p-channel BICFET in the Ge/sub x/Si/sub 1-x//Si system

Silicon‐Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency

“…First epitaxial silicon transistors [7] First oxidation study of SiGe [8] First SiGe n-type MODFET [9] First SiGe p-type MODFET [10] First SiGe photodetector [11] First SiGe HBT (heterojunction bipolar transistor) [12] First SiGe hole RTD (resonant-tunneling diode) [13] First SiGe (BiCFET) (bipolar inversion channel FET) [14] First SiGe HBT grown by CVD (chemical vapor deposition) [15] First SiGe gate (CMOS) technology [16] First SiGe waveguide [17] First SiGe LED [18] First SiGe solar cell [19] First SiGe phototransistor [20,21] First SiGe HBT with peak cutoff frequency above 100 GHz [22] First SiGe HBT with peak cutoff frequency above 200 GHz [23] First SiGe HBT with peak cutoff frequency above 300 GHz [7] Current Record SiGe HBT with peak cutoff frequency 500 GHz [24] Thermoelectric figure of…”

Optical properties of Si-Si1−xGex and Si-Ge nanostructures

“…Early in the 70s, theorists predicted that suitably structured superlattices of two indirect bandgap semiconductors could produce a direct bandgap material through proper folding of the Brillouin zone [6,8,9], which when applied to Si and Ge, will be the ultrathin Sim-Gen (m + n = 10) superlattices. In the early work on this subject, Pearsall et al [1][2][3][4][5][6][7][8][9][10]11] observed features in their electroreflectance measurements at energies theoretically predicted for pseudodirect optical transitions in the superlattices grown on Ge buffer. Further studies [13,14] on similar samples by stress-modulated reflectance (or piezoreflectance) have identified that the low energy structures at energies above the Ge direct bandgap are due to quantum confined direct transitions from the Ge spacer region rather than from the pseudo-direct bandgap Sim-Gen superlattices.…”

“…The current research on this subject focuses on two aspects, i.e. electron transport [1][2][3][4] and optical characterization of structures aiming at possible cheap Si-based optoelectronic devices technologically compatible with the widely spread industrial use of silicon technology [5][6][7]. Most of the recent work on the optical properties of Si-Sia_xGex and Si-Ge low dimensional structures are based on molecular beam epitaxial (MBE) or metal-organic chemical vapour deposition (MOCVD) grown 2D ultrathin Sim-Ge, superlattices with (m + n) = 10, in which system the possibility of achieving pseudodirect bandgap was predicted in theory [6,8,9].…”