2013
DOI: 10.1002/pip.2444
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Demonstration of a hot-carrier photovoltaic cell

Abstract: We demonstrate a new hot-carrier photovoltaic cell based on the resonant tunnelling of hot electrons from a narrow-band-gap semiconductor to a wider-band-gap semiconductor. Hot electrons are photogenerated at a variety of wavelengths in a GaAs absorber followed by resonant tunnelling through a double-barrier quantum well into an AlGaAs collector, forming an energy-selective interface in the centre of the device. We show theoretically the presence of a tunnel current from the absorber to the collector under ill… Show more

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Cited by 76 publications
(75 citation statements)
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“…The cell operation is usually described from the point of view of the kinetic transport theory by consideration of quasi-equilibrium thermal emission of the hot carriers from the absorber material into the energy filtering structure. This emission may be described in simple cases by the thermionic emission theory [3,[6][7][8][9][10], being a kinetic transport theory. Kinetic theories are in principle wellsuited to describe charge transport in the solar cell; however, the description is rather complex in various specific cases.…”
Section: Hot Carrier Solar Cell As Thermoelectric Devicementioning
confidence: 99%
“…The cell operation is usually described from the point of view of the kinetic transport theory by consideration of quasi-equilibrium thermal emission of the hot carriers from the absorber material into the energy filtering structure. This emission may be described in simple cases by the thermionic emission theory [3,[6][7][8][9][10], being a kinetic transport theory. Kinetic theories are in principle wellsuited to describe charge transport in the solar cell; however, the description is rather complex in various specific cases.…”
Section: Hot Carrier Solar Cell As Thermoelectric Devicementioning
confidence: 99%
“…Previously we had theoretically justified our structural design and optoelectronically characterized the final device to show characteristics of hot carrier transfer [8]; in this paper we will further explore both fundamental and device properties, demonstrating improved IV characteristics and exploring the carrier transport and structural properties through optical measurements.…”
Section: Conceptmentioning
confidence: 98%
“…The p-i-n structure was grown to study how an improved extraction for holes over the original n-i-n hot carrier structure [8] would increase the photocurrent and voltage of the cell. The original structure was a n-i-n structure, this had the benefit of the sole driving force of the cell being the difference in the temperature and density of the electron populations of the absorber and collector, allowing us to unambiguously probe the hot carrier contribution to the device characteristics, but the drawback that this lowered efficiency.…”
Section: P-i-n Structurementioning
confidence: 99%
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“…[20]. As for the energy selective contacts, the most studied option is based on the exploitation of different variations of the resonant tunnelling using nanostructures [21]. Dimmock et al [22] have proposed and investigated a HCSC implemented on a metal-semiconductor junction.…”
Section: Brief Review Of the Status Of Empirical Research On Novel Comentioning
confidence: 99%