Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells

Abstract

We demonstrate GaN-based semipolar (2021¯) laser diodes (LD) in the green region of the spectrum. 505 nm lasing was observed under pulsed operation, with a threshold current density (Jth) of 27.5 kA/cm2 and a threshold voltage (Vth) of 15.5 V. The blueshift of spontaneous emission was less than 5 nm when varying the injection current level from 125 A/cm2 to threshold. Simulations show that the reduced blueshift can be attributed to the minimal dependence of the energy potential profile in the active region on the applied bias and current injection level.

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

“…Besides, (1122) oriented films appear to be mostly smooth [9]. Effective long-wavelength emission of InGaN/GaN LEDs grown on the (2021) substrate and on the (2021) substrate has been reported in many papers (see, e.g., [17][18][19] and [20][21][22], respectively). However, taking into account aggregate results of the above analysis, we have decided to choose the (1122) InGaN/GaN LEDs.…”

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

“…5 These characteristics make them very suitable not only for use in communication systems but also in the display and medical applications listed above, which typically rely on planar InGaN/GaN quantum wells (QWs). [6][7][8] The nanowire devices have further advantages of planar InGaN/GaN QW lasers which must be grown on expensive polar or non-polar GaN substrates, suffer from large defect densities, and from which emission can currently only reach green ($530 nm). The nanowire heterostructures, on the other hand, can be grown on cheap (001) or (111) silicon substrates.…”

Experimental study of the orientation dependence of indium incorporation in GaInN

“…Early work focused on the (10-1-1) GaN substrate orientation as GaInN LEDs and LDs grown on that orientation for emission in the blue and longer wavelengths showed promise [6][7]. Substantial efforts were made to perfect the growth on (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN [8][9][10][11] as indium incorporation was favored on this orientation. However, material quality degradation due to misfit dislocation generation at high indium content [12] shifted the focus to other orientations, since (20)(21) GaN was shown to be capable of incorporating sufficient indium while maintaining the crystalline quality, enabling the demonstration of the first true green GaN based lasers [13].…”

“…Other semipolar orientations such as (20-2-1), (30)(31), (30-3-1), etc. have also been proposed [14][15][16]. Northrup [17] attempted to theoretically predict the relative indium incorporation on the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) and planes.…”

“…have also been proposed [14][15][16]. Northrup [17] attempted to theoretically predict the relative indium incorporation on the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) and planes. His first-principle calculations indicated that for a clean and indium rich surface indium incorporation is higher on (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN surface than on a surface.…”