Demonstration of 4H-SiC visible-blind EUV and UV detector with large detection area

Xin, Xiaobin; Yan, Feng; Koeth, T.; Joseph, Charles L.; Hu, Jun; Wu, Jia; Zhao, Jing

doi:10.1049/el:20052977

Cited by 47 publications

(24 citation statements)

References 3 publications

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“…The magnitude of the electric field at breakdown was estimated as 3.5 MV/cm. The fact that SiC devices have much lower DD (<10 5 cm -2 ) and low micropipe densities (Ӷ10 2 cm -2 ), seem to give, today, to SiC a leading position to obtain larger area (≥100 µm in diameter) avalanche UV PDs [61,62]. Progresses in availability of lower GaN DD substrates have been reflected recently in larger area APD [63,64].…”

Section: Photodetectors With Internal Gain: Avalanche Uv Detectorsmentioning

confidence: 99%

(Al,In,Ga)N‐based photodetectors. Some materials issues

Muñoz

2007

Physica Status Solidi (b)

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www.pss-b.com filters are needed to stop low energy photons (VIS and infrared light), degradation is produced by UV photons (shorter device lifetime), efficiency lowers, dark current increases markedly with temperature, etc. The development of higher band gap III-arsenides or III-phosphides for UV photodetection did not progress substantially. On the other hand, for high sensitivity UV applications, PMT are needed, being bulky and requering a high-voltage power supply [1][2][3].To avoid the use of filters, to increase efficiency, to lower noise and dark current specially above room temperature, and to achieve visible-blind operation, UV detectors based on wide band gap semiconductors have been studied during the last decade. Thin film synthetic diamond detectors (E g = 5.4 eV, 227 nm, direct gap), were developed and commercialised mainly as polycrystalline photoconductor devices. SiC p-n junction PD (4H-SiC, E g = 3.26 eV; 6H-SiC, E g = 3 eV, indirect gap), have been also available. However, the turning point to make visible-blind UV detectors an appealing reality, to open really new possibilities for UV detection, has been the development of (Al,In,Ga)N semiconductors. The possibility of selecting the cut-off wavelength by adjusting the mole fraction of the ternary or quaternary alloys is unique, so far not being proven by any other wide-band-gap semiconductor family [2].III-nitrides are direct band gap materials, with GaN showing its absorption edge at 360 nm (E g = 3.44 eV) and at 200 nm for AlN (E g = 6.2 eV), and with the ability to form heterojunctions and to withstand high temperatures. Even the 400 nm UV frontier can be reached using (In,Ga)N alloys (band gap assigned today to InN is 0.7 eV). This tunability of the detection edge by just varying the Al(In) mole fraction, and the fact that (Al,In,Ga)N technology is already fully commercial for light emitting diodes, laser diodes (LEDs and LDs, respectively) [4], and it has just started for high electron mobility transistors (HEMTs), are very important points that have made (Al,In,Ga)N alloys the most adequate solution for UV detection in many applications. Besides, the high chemical and thermal stability of GaN, GaN-based detectors are also of interest for high photon energy detection (e.g. VUV and X-rays) and even for high energy particle detection [5].The photoconductive properties of GaN were studied by Pankove and Berkeyheiser in 1974 [6], and in about fifteen years of III-nitrides technology, the first GaN UV photoconductive detectors were reported by Khan in 1992 [7]. Since then, practically all types of PD structures have been developed, directly linked to advances in GaN and AlGaN epitaxial growth, and to progresses in p-type doping and in ohmic and Schottky contact technology. Trying to give a perspective of the developments, we may consider an initial exploratory phase (a proof of concept, first generation of UV detectors, VIS blind), just trying to confirm that GaN and AlGaN PDs (with low-medium Al mole fractions) were feasible. Later, a second ...

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Section: Photodetectors With Internal Gain: Avalanche Uv Detectorsmentioning

confidence: 99%

(Al,In,Ga)N‐based photodetectors. Some materials issues

Muñoz

2007

Physica Status Solidi (b)

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“…Recently, significant progress has been made in fabricating SiC-based UV APD. Xin et al have demonstrated 4H-SiC UV APD with the single photon counting capability at room temperature [4]. By employing the separated-absorption-multiplication (SAM) structure, Guo et al have demonstrated 4H-SiC APD with 83% external quantum efficiency at 278 nm wavelength and a gain greater than 1000 [5].…”

Section: H-sic Nano-pillar Avalanche Photodiode Withmentioning

confidence: 99%

4H-SiC Nano-Pillar Avalanche Photodiode With Illumination-Dependent Characteristics

Hong

Zhou

Wang

et al. 2011

IEEE Photon. Technol. Lett.

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A 4H-SiC nano-pillar-based avalanche photodiode (NAPD) with a separate absorption region and a multiplication region is proposed and its optoelectronic performance is modeled. By properly designing the device geometry and the doping concentration of each layer, the avalanche breakdown voltage of the NAPD is found to be dependent of the incident wavelength and power density, which are explained by the band diagrams of 4H-SiC NAPDs.

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“…A number of groups have explored Schottky and metal-semiconductor-metal (MSM) 4H-SiC photodetectors to address this issue by enhancing the absorption of DUV photons within the depletion region of the device (8,9). Scuito et al, report a peak QE of 29% at 255 nm for vertical Schottky diodes fabricated on n-type 4H-SiC using the pinchoff surface effect to increase the direct optical absorption area in the detector (8).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Enhancing the Deep Ultraviolet Performance of 4H-SiC Based Photodiodes

et al. 2014

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In this paper we report on two new approaches for increasing the the deep ultraviolet response (l < 260 nm) of 4H-SiC photodiodes by employing p-n- SiC- metal or p-n- SiC – n- AlxGa1-xN structures. The p-n- SiC- metal diodes, employing a transparent window metal, have a nearly flat response between 200-270 nm with peak external quantum efficiency (EQE) of 45%. A peak QE of 76% is observed for the p-n- SiC – n- AlxGa1-xN diodes at 242 nm. The significant enhancement in short wavelength response observed in both diodes is attributed to preferential absorption of deep ultraviolet photons within the depletion region of these structures as compared to that in the top doped layer of a p-i-n SiC photodiode, and the more efficient collection of photo-generated carriers through drift despite the presence of surface/interface states.

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Demonstration of 4H-SiC visible-blind EUV and UV detector with large detection area

Cited by 47 publications

References 3 publications

(Al,In,Ga)N‐based photodetectors. Some materials issues

(Al,In,Ga)N‐based photodetectors. Some materials issues

4H-SiC Nano-Pillar Avalanche Photodiode With Illumination-Dependent Characteristics

(Invited) Enhancing the Deep Ultraviolet Performance of 4H-SiC Based Photodiodes

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