Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices

“…To understand the impact of the 3D scaling rules on the DA performance of the devices, scaled TIGBTs [4] as well as scaled TCIGBTs [17] in FS technologies are considered, as shown in Fig. 17 and Fig.…”

“…19. Note that the device thickness in all structures are identical as in [4] in order to compare the electrical characteristics. Fig.…”

“…Recent development of TIGBTs is focused on increasing power densities and switching frequencies with the aims to compete with Wide Band Gap (WBG) power devices and achieve design optimization and cost reduction for power conversion systems [1]. Several novel technologies have been implemented to continuously improve the switching loss (Eoff) and on-state voltage drop (Vce(sat)) trade-off through emitter side Injection Enhancement (IE) effect [2][3][4]. The improvements in the Eoff-Vce(sat) trade-off have resulted in not only low loss operations but also increases in current densities and improved cost performance of TIGBT modules.…”

“…In addition, the influence of current density and supply voltage on the DA performance of TIGBTs is experimentally investigated. Finally, the impact of 3-D scaling rules of TIGBTs [3,4] on the DA behavior is evaluated in detail.…”

High dV/dt Controllability of 1.2kV Si-TCIGBT for High Flexibility Design with Ultra-low Loss Operation

“…Trench Insulated Gate Bipolar Transistor (TIGBT) is a key component in power electronics applications today, and its performance has been improved by new approaches [1]- [5]. The improvements in the switching loss (Eoff) and on-state voltage drop (Vce(sat)) trade-off have resulted in not only low loss operation but also increases in current density and improvement in cost performance of TIGBT modules.…”