Demonstration of 10 kV, 50A 4H-SiC DMOSFET with stable subthreshold characteristics across 25&amp;#x2013;200 &amp;#x00B0;C operating temperatures

Howell, Robert S.; Buchoff, S.; Campen, S. Van; McNutt, Ty; Nechay, Bettina; Sherwin, M.E.; Singh, Ranbir

doi:10.1109/isdrs.2007.4422414

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“…An SiC can operate even at a junction temperature above 200°C [12]. As a result, if the element has a high temperature resistance, the current level can be increased and greater output can be achieved.…”

Section: Greater Outputmentioning

confidence: 99%

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Development of High‐Power Density Interleaved dc/dc Converter with SiC Devices

Kitamura

Yamada

Harada

et al. 2016

Electrical Engineering Japan

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We developed an interleaved dc/dc converter with SiC devices. We applied full-SiC modules including MOS-FETs and SBDs to the interleaved dc/dc converter to achieve a high-power density. An SiC has a high temperature resistance, which facilitates an improvement in highfrequency drives. We achieved a high-power density by utilizing this high temperature resistance. We also fabricated a prototype and tested it with loads up to 65 kW.

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Section: Greater Outputmentioning

confidence: 99%

“…In a Si semiconductor, the junction temperature has an upper limit of about 150°C. An SiC can operate even at a junction temperature above 200°C [12]. Taking account of the heat resistance of the package, it can continuously operate at a junction temperature of 175°C and also work at 200°C instantaneously.…”

Section: Greater Outputmentioning

confidence: 99%