Degradation of yellow light-emitting GaAs0.1P0.9:N diodes. II. Diffused diodes

Abstract

The stress‐induced light output decrease observed on VPE GaAs0.1P0.9:N LED prepared by lowtemperature Zn‐diffusion, can be explained by the degradation of the p‐region only. The behaviour of the injection luminescence decay is interpreted using the Shockley‐Read‐Hall model for point‐like killer centres. The applied stress enlarges the p‐region centre concentration resulting in the decay time decrease measured.