Degradation of the piezoelectric response of sputtered c-axis AlN thin films with traces of non-(0002) x-ray diffraction peaks

Sanz‐Hervás, A.; Clément, M.; Iborra, E.; Vergara, L.; Olivares, J.; Sangrador, J.

doi:10.1063/1.2191425

Cited by 79 publications

(36 citation statements)

References 9 publications

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“…Although the displacements increase with the applied voltage, lags are observed in (c), (e) and (h) of Fig. 6 with the applied tip bias voltage \2.0 V, which may be caused by the presence of AlN particles with opposite polarity in the detected region [27]. Additionally, the fluctuation of the displacements in Fig.…”

Section: The Measurement Of the Longitudinal Piezoelectric Coefficientmentioning

confidence: 84%

A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films

et al. 2014

J Mater Sci: Mater Electron

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This paper proposes a new model for the longitudinal piezoelectric coefficient (LPC) measurement of the aluminum nitride (AlN) thin film on (100) Si substrate, the AlN thin film is fabricated by the direct-current magnetron sputtering and the piezoelectricity of the AlN thin film is measured by the piezoresponse force microscopy (PFM) in contact mode. In this model, the electric field distribution is taken into account, and the electrostriction displacement caused by the local field concentration is excluded from the measured displacement by the PFM. A LPC value of 4.22 ± 0.34 pm/V is obtained for the clamped AlN thin film by this model, and the deviation between this value and that measured under homogenous field condition is \5.7 %. Therefore, it is reasonable to apply our model to the piezoelectricity characterization of AlN thin films when using the PFM. Furthermore, piezoelectricity of other thin films could also be characterized using this model, which could simplify the measurement process.

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Section: The Measurement Of the Longitudinal Piezoelectric Coefficientmentioning

confidence: 84%

A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films

et al. 2014

J Mater Sci: Mater Electron

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“…1. This type of AIN films have been widely described in [23]. To achieve AIN films on Si0 2 and Ta 2 0 5 substrates with a significant piezoelectric activity a great negative polarization has to be applied to the substrate during deposition.…”

Section: Resultsmentioning

confidence: 99%

Growth of AlN oriented films on insulating substrates

Olivares

Capilla

Clément

et al. 2011

2011 IEEE International Ultrasonics Symposium

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Abstract-This work describes the structural and piezoelectric assessment of aluminum nitride (AIN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investígate the effect of different insulating seed layers on AIN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (SÍ3N4), silicon dioxide (Si0 2 ), amorphous tantalum oxide (Ta 2 O s ), and amorphous or nano-crystalline titanium oxide (Ti0 2 ) are deposited on glass plates to a thickness lower than 100 nm. Before AIN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argón or nitrogen ions. Only AIN films grown of Ti0 2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Puré c-axis oriented films, with FWHM of rocking curve of 6 o , stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AIN films are achieved on amorphous Ti0 2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AIN films deposited on Si 3 N 4 , Si0 2 and TaO x exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalídate their use in acoustic devices.

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“…For example, previously we have reported that c-axis films with traces of non-0002 reflections in their x-ray diffraction ͑XRD͒ patterns usually exhibit a very poor piezoelectric response. 6 It would be very convenient to control the crystal quality of AlN films during production to guarantee a perfect c-axis orientation. Optical techniques are a better choice than XRD for this purpose, as they provide in-line, fast assessment of the film quality.…”

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confidence: 99%

Dependence of the IR reflectance LO absorption bands on the crystalline texture of AlN films

Iborra

Clément

Vergara

et al. 2006

Applied Physics Letters

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The infrared reflectance spectra of polycrystalline sputtered AlN films are analyzed in relation to their crystalline texture. AlN films with perfect c-axis orientation and good piezoelectric response exhibit a single peak at 887cm−1 corresponding to the A1–longitudinal-optical (LO) vibrational mode. However, {0001}-textured films with traces of 101̱1, 101̱2, and 101̱3 reflections in their x-ray diffraction patterns show an additional peak at 905cm−1 that we assign to an E1-A1 quasi-LO mode due to interaction of light with non-⟨0001⟩-oriented grains. The piezoelectric response deteriorates as the amplitude of the quasi-LO mode increases with respect to the A1(LO) mode.

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Degradation of the piezoelectric response of sputtered c-axis AlN thin films with traces of non-(0002) x-ray diffraction peaks

Abstract: Articles you may be interested inSynthesis and characterization of 10nm thick piezoelectric AlN films with high c-axis orientation for miniaturized nanoelectromechanical devices Appl. Phys. Lett.

Cited by 79 publications

References 9 publications

A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films

A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films

Growth of AlN oriented films on insulating substrates

Dependence of the IR reflectance LO absorption bands on the crystalline texture of AlN films

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