2001
DOI: 10.1016/s0955-2219(01)00036-x
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Degradation of the d33 piezoelectric coefficient for PZT ceramics under static and cyclic compressive loading

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Cited by 36 publications
(25 citation statements)
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“…As a result power ultrasonic devices are almost exclusively manufactured from hard doped ceramics, [84] which show strong depolarisation resistance due to rigid domain wall clamping via charged dopants. [83] As a drawback, only intrinsic contributions to the piezoelectric coefficient are available for piezoelectric strain. If a device is driven as a charge generator which is optimised for maximum output and thus cannot be hard doped, the depolarisation represents a severe reduction in performance.…”
Section: Compression-compression Loadingmentioning
confidence: 99%
“…As a result power ultrasonic devices are almost exclusively manufactured from hard doped ceramics, [84] which show strong depolarisation resistance due to rigid domain wall clamping via charged dopants. [83] As a drawback, only intrinsic contributions to the piezoelectric coefficient are available for piezoelectric strain. If a device is driven as a charge generator which is optimised for maximum output and thus cannot be hard doped, the depolarisation represents a severe reduction in performance.…”
Section: Compression-compression Loadingmentioning
confidence: 99%
“…The charge (Q) values and Electrical energy generated were calculated using equations (17) and (18). 33 3 (22)- (24).…”
Section: Analytical Modelmentioning
confidence: 99%
“…Loss Mechanisms using antiresonance mode rather than the conventional resonance mode was analyzed by Uchino [17]. Algureo has studied the degradation of d 33 piezoelectric coefficient of PZT ceramics subjected to compressive stress along the poling direction [18]. Characterization of piezoelectric d 33 mode piezoelectric MEMS energy harvester was analyzed by Park with the introduction of seed layer thin film of PbTiO 3 in between ZrO 2 and PZT to improve the piezoelectric property [19].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, it indicates that the domain reorientation induced by the stress is very limited compared to that from the electric field. From another point of view, it is also known that the stress-induced domain reorientation is only 90 • and direction dependent [17][18][19][20][21][22][23][24]. The compressive stress normal to poling direction in the bimorph actuator is not favorable to and would restrict the domain reorientation.…”
Section: Series Bimorphmentioning
confidence: 99%