Degradation of Si/sub 1-x/Ge/sub x/ epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons

Ohyama, H.; Vanhellemont, Jan; Yamaguchi, Takami; Hayama, K.; Sunaga, H.; Poortmans, Jef; Caymax, Matty

doi:10.1109/23.488749

Cited by 33 publications

(13 citation statements)

References 14 publications

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“…Higher concentrations of germanium (x > 0.15) lead however to significant radiation hardening of devices as was observed in strained Si 1−x Ge x epitaxial devices for electron and neutron irradiation [40,41] and for proton irradiation [42].…”

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confidence: 99%

Germanium doping for improved silicon substrates and devices

Vanhellemont

Chen

Lauwaert

et al. 2011

Journal of Crystal Growth

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During the last decade, the 300 mm silicon wafer has been optimized and one is studying the move to 450 mm crystals and wafers. The ever increasing silicon crystal diameter leads to two important trends with respect to substrate characteristics: the interstitial oxygen concentration decreases while the size of grown in voids (COP's) in vacancy-rich crystals is increasing.The first effect is due to the large melt in which movements have to be controlled and partly suppressed by the use of magnetic fields. This magnetic confinement leads to a more uniform dopant incorporation but at the same time to a more limited transport of oxygen from the quartz crucible to the melt and the growing crystal. The reduced interstitial oxygen concentration and the lower thermal budget of modern device processing leads to strongly reduced oxygen precipitation and thus internal gettering capacity.The increasing COP size (accompanied by a decreasing density) is caused by the decreasing pulling rate and thermal gradient that have to be used in order to avoid dislocation formation. The slower cooling of the crystal leads to a decreased void nucleation rate and at the same time to an increased thermal budget for void growth as well as a larger number of vacancies available per void. Journal of Crystal Growth November 9, 2010 In the present paper the effect of germanium doping in the range between 10 16 cm −3 and 10 19 cm −3 on COP formation and oxygen precipitation is discussed and illustrated. Also the beneficial effect of germanium doping with respect to wafer breakage during processing, with respect to the suppression of thermal donor formation and with respect to improving device radiation hardness is addressed. Preprint submitted to

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confidence: 99%

Germanium doping for improved silicon substrates and devices

Vanhellemont

Chen

Lauwaert

et al. 2011

Journal of Crystal Growth

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“…More details on the device process are described in previotls papers. [1][2][3] Devices without applied bias voltage were irradiated at room temperature by a 20 MeV alpha-ray in the AVF cyclotron in TIARA at the Takasaki Radiation Chemistry Research Establishment. The fluence of the alpha-ray was varied between 101~ and 1013 1/cm 2.…”

Section: Methodsmentioning

confidence: 99%

Radiation damage in Si1−x Ge x heteroepitaxial devices

Ohyama

Simoen

Claeys

et al. 1999

J Radioanal Nucl Chem

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Results are presented of an extended study on the induced lattice defects and their effects on the degradation of Sil_xGex devices, subjected to a 20 MeV alpha-ray, 1 MeV electron, 1 MeV fast neutron, and 20 and 86 MeV proton irradiations. The degradation of the electrical device performance increases with increasing fluence, while it decreases with increasing germanium content. In the Sil_xGe x epitaxial layers, electron capture levels associated with an interstitial-substitutional boron complex are induced. The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects.

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“…<Epp> is also 124 eV. The primary knockon cross section for 220-MeV carbon particles (ap.c(E)) is 4.5 x 10-21 cm" 2 [7]. Then, the fractional displacement concentration (Cd.c) is given by…”

Section: -3mentioning

confidence: 99%

“…According to the same procedures, Nd for 1-MeV neutrons is calculated to be 295 cm" 3 and is about one third of that for carbon irradiation [7].…”

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confidence: 99%

Radiation Damage in Si Avalanche Photodiodes by 1-Mev Fast Neutrons and 220-Mev Carbon Particles

et al. 1997

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Results are presented of a study on the degradation of the electrical and optical performance of n+p Si avalanche photodiodes, subjected to 1-MeV fast neutrons and to a 220-MeV carbon irradiation. The dark current increases after irradiation, while the photo current decreases. Two dominant hole capture levels, which are responsible for the degradation of performance, are after irradiation observed by DLTS (Deep Level Transient Spectroscopy). The degradation caused by neutron irradiation is smaller than that for carbon irradiation. The differences in the radiation damage are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

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Degradation of Si/sub 1-x/Ge/sub x/ epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons

Cited by 33 publications

References 14 publications

Germanium doping for improved silicon substrates and devices

Germanium doping for improved silicon substrates and devices

Radiation damage in Si1−x Ge x heteroepitaxial devices

Radiation Damage in Si Avalanche Photodiodes by 1-Mev Fast Neutrons and 220-Mev Carbon Particles

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