Degradation of Radiation-Hardened Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor During Gamma Ray Irradiation Performed After Heavy Ion Striking

Li, Xinyu; Jia, Yunpeng; Zhou, Xintian; Zhao, Yuanfu; Tang, Yun; Li, Yuan; Liu, Guanghai; Guo, Jia

doi:10.1109/led.2019.2961259

Cited by 20 publications

(8 citation statements)

References 26 publications

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“…Under the off state, the drain-gate terminal of the depletion-mode GaN HEMT and the source-drain channel of silicon MOSFET is the main current-leakage paths. Previous reports [14][15][16] showed that N-channel MOSFET is very sensitive to TID and that the drain current increases with the accumulated gamma-ray dose. In addition, the defect caused by neutron irradiation in the silicon layer and Si-SiO 2 interface could lead to an increase in the channel resistance and a decrease in the carriers' mobility in the MOSFET device.…”

Section: Discussionmentioning

confidence: 99%

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray irradiation. The results show that when the accumulated gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 × 1012 n/cm2 and 3 × 1012 n/cm2 exhibit a lower degradation than the sum of the two separated effects. However, the threshold voltage shifts of the cascode structure GaN HEMT show a higher degradation when exposed to both TID and DDD effects. Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are investigated using the scanning electron microscopy technique. It is shown that for the p-GaNHEMT, the increase in channel resistance and the degradation of two-dimensional electron gas mobility caused by neutron irradiation suppresses the increase in the TID leakage current. For the cascode structure HEMT, the neutron radiation-generated defects in the oxide layer of the metal–oxide–semiconductor field-effect transistor might capture holes induced by gamma-ray irradiation, resulting in a further increase in the number of trapped charges in the oxide layer.

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Section: Discussionmentioning

confidence: 99%

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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“…Compared with traditional MOSFET devices, super-junction MOSFET devices have theoretical advantages of being resistant to single-event radiation. First, the longitudinal electric field of the super-junction MOSFET is constant, which can reduce the maximum electric field strength in the drift region compared with the traditional MOSFET, and with the increase of the drain voltage, the decrease of the maximum electric field is more significant [8]. The avalanche current generated is relatively reduced.…”

Section: Introductionmentioning

confidence: 99%

Research on single-event burnout hardening of super-junction MOSFET

Wang¹,

Song²,

Hu³

2023

International Conference on Optoelectronic Materials and Devices (ICOMD 2022)

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When superjunction power devices work in spacecraft, they have to face extremely high radiation intensity, among which the single event effect is very serious, it will cause different types of damage to power devices, and then have catastrophic consequences for spacecraft, and With the increasing complexity and device integration of spacecraft systems, the harm of single event effects will become more serious. Therefore, it is very necessary to conduct research on anti-single event burnout of superjunction MOSFETs in aerospace applications. In order to solve the problem of single-event burnout of super-junction MOSFET under heavy-ion strike, the single event radiation effect and radiation hardening of traditional super-junction MOSFET devices are studied by using sentaurus TCAD simulation tool. The simulation results show that the device is most sensitive to the single-event effect when heavy-ion are vertically incident at the middle of the gate of the super-junction device, and the opening of the parasitic bipolar junction transistor is an important reason for the single-event burnout. A 200 V radiation-hardened super-junction power MOSFET device structure is designed. The experimental results show that the designed super-junction power MOSFET device with a buffer layer structure relieves the strong electric field on the backside during heavy-ion strike, has good resistance to single-event burnout, and improves the robustness of the device in aerospace applications.

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“…Single event gate rupture (SEGR) [16,17] is a catastrophic failure mode of SEE, [18][19][20] which can destroy the ability of the gate to regulate current flow from the source to the drain by permanently damaging the gate insulator. [21] Recently, some studies [22,23] focused on the TID effect on SEGR in Si vertical double-diffused metaloxide-semiconductor field effect transistors (MOSFETs). Researchers have found that the charge trapping could enhance the localized electric field, resulting in SEGR at reduced applied bias.…”

Section: Introductionmentioning

confidence: 99%

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

et al. 2023

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The synergistic effect of total ionizing dose (TID) and single event gate rupture (SEGR) in SiC power MOSFETs was investigated via simulation. The device was found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism was revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.

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Degradation of Radiation-Hardened Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor During Gamma Ray Irradiation Performed After Heavy Ion Striking

Cited by 20 publications

References 26 publications

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Research on single-event burnout hardening of super-junction MOSFET

Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

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