Degradation of inhibitor in alkaline cleaning solution for post-Cu CMP cleaning

Lai, Shin-Mei; Chen, Yinying; Liu, Chien-Pan; Hsieh, Cheng‐Chih; Lin, Jeng‐Yu

doi:10.1016/j.surfcoat.2018.02.039

Cited by 24 publications

(15 citation statements)

References 22 publications

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“…11,12 However, those conventional organic heterocyclic compounds could cause CMP challenges, like a high mechanical abrasion, toxic and defects. [13][14][15] Therefore, more efficient ways become necessary to suppress Cu chemical removal from recessed surface regions at low concentrations of conventional organic corrosion inhibitors. Surfactant molecules adsorbed on the wafer surface may function as an effective passivating film for protection in the lower lying areas.…”

mentioning

confidence: 99%

Effect of Complexing Agent Choices on Dishing Control Level and the Shelf Life in Copper CMP Slurry

Luan¹,

Cheng²,

Liu³

et al. 2018

ECS J. Solid State Sci. Technol.

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There has been lot of work going on reducing dishing without benzotriazole (BTA) because it can lead to organic debris and other defects during the chemical mechanical planarization (CMP) although being an effective dissolution inhibitor on dishing elimination. Slurry destabilization problems also have to be closely monitored because it can cause surface defects and changes in the material removal due to particle agglomeration and the chemical degradation. In this study, FA/O chelating agent, a unique alkaline organic macromolecule, yielded a lower dishing level under the condition of no BTA compared with glycine, which allows for a substantial reduction in the use of BTA. The dissolution rate, polish rate and changes in the in-situ open circuit potential (OCP) were performed to elucidate the planarization mechanism and how the use of carcinogenic BTA can be reduced. It was also observed that the FA/O based slurry had a shelf life of no more than 7 days and the root cause was the oxidation reduction reaction between FA/O chelating agent and H 2 O 2 rather than the self-decomposition of the hydrogen peroxide.

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mentioning

confidence: 99%

Effect of Complexing Agent Choices on Dishing Control Level and the Shelf Life in Copper CMP Slurry

Luan¹,

Cheng²,

Liu³

et al. 2018

ECS J. Solid State Sci. Technol.

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“…Cleaning mechanism of BTA removal.-Chemical reactions are the primary method for removing BTA residues from the surface of copper in the post-CMP cleaning process. 32 To evaluate the cleaning effectiveness, X-ray photoelectron spectroscopy (XPS) was used. Figure 14 illustrates the XPS spectrum obtained from the copper surface cleaned using different materials.…”

Section: Corrmentioning

confidence: 99%

Synergistic Effect of Composite Complex Agent on BTA Removal in Post-Cu-CMP: Experimental and Theoretical Analysis

Du,

Wang,

Wang

et al. 2023

ECS J. Solid State Sci. Technol.

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Nowadays the development of nanoscale-interconnected integrated circuit chips makes the chemical mechanical polishing (CMP) and post-CMP cleaning more challenging. In general, organic residues such as benzotriazole (BTA) can adsorb on the wafer surface after CMP process and form thin films to prevent the contact between cleaning solution and the wafer surface, which thus can seriously affect the post-CMP cleaning process. And the efficient removal of BTA remains problematic due to the potential introduction of additional impurities. Therefore, a new alkaline cleaning solution based on citric acid (CA) was proposed to improve the removal efficiency of BTA. Results exhibit that the cleaning efficiency of BTA residues can reach 98.86% with 400 ppm tetraethyl ammonium hydroxide (TEAH) and 0.6 wt% CA (pH = 10.5). X-ray photoelectron spectroscopy (XPS) measurements show that the cleaning solution can coordinate with copper ions to break the ionization balance of Cu-BTA. In addition, the electronic properties and reaction sites on copper surface were determined by quantum chemical calculation and density functional theory (DFT). The theoretical analysis indicates that CA has hydroxyl and carboxyl functional groups, and its presence with TEAH can promote the complexation of Cu ions, which accelerates the breakage of Cu-BTA and the desorption of BTA from the copper surface.

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“…The key to the success of this technology lies in its excellent electrical properties, allowing the conduction of charge with minimal resistive losses. [ 1–4 ] As the essential ultra‐precision manufacturing approach, chemical mechanical polishing (CMP) can achieve both local and global planarization of Cu interconnection by removing the excess Cu in the Damascene process. [ 5 ] With the technology nodes decreasing, it is imperative to improve the CMP performance, such as the planarization property after CMP, which directly influences the performance of devices.…”

Section: Introductionmentioning

confidence: 99%

Prediction of planarization property in copper film chemical mechanical polishing via response surface methodology and convolutional neural network

et al. 2021

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Chemical mechanical polishing (CMP) is one of the most important and effective technologies to achieve global planarization for precision machining of the wafer surface. The planarization property of slurry is an essential index in evaluating the quality of the copper (Cu) film CMP process. Prediction of the planarization property is of vital significance for product quality control during the CMP process. Data‐driven approaches to predict results based on response surface methodology (RSM) and neural network (NN) to pursue better prediction performance were proposed in this paper. In our design, all three optimization methods (RSM, NN, RSM + NN) are proved to be accurate and reliable, which can predict the experimental results with finer grid accuracy under the condition of only 17 test data points. In particular, the prediction accuracy of RSM + NN method is higher than that of the other two methods, and the error is only 0.16 %. Notably, the results demonstrate that such less time‐consuming optimization methods can realize the acquisition of more desirable CMP process parameters and compositions of slurries, and the versatility and simplicity of our methods can also potentially provide an alternative experiment design concept for a wider range of applications.

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Degradation of inhibitor in alkaline cleaning solution for post-Cu CMP cleaning

Cited by 24 publications

References 22 publications

Effect of Complexing Agent Choices on Dishing Control Level and the Shelf Life in Copper CMP Slurry

Effect of Complexing Agent Choices on Dishing Control Level and the Shelf Life in Copper CMP Slurry

Synergistic Effect of Composite Complex Agent on BTA Removal in Post-Cu-CMP: Experimental and Theoretical Analysis

Prediction of planarization property in copper film chemical mechanical polishing via response surface methodology and convolutional neural network

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