Degradation of II-VI based blue-green light emitters

Guha, Supratik; DePuydt, J. M.; Haase, M. A.; Qiu, Jun; Cheng, Hai‐Ping

doi:10.1063/1.110218

Cited by 230 publications

(57 citation statements)

References 11 publications

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“…One can see the absence of dark spot defects and the subsequent ͗100͘ dark line defects which are usually observed and have previously been recognized as the principal cause for the rapid degradation of the active layer in II-VI laser diodes. [1][2][3][4] Instead of this, an increase in PL efficiency can be observed in the area previously submitted to intense optical excitation. As a comparison, Fig.…”

Section: ϫ2mentioning

confidence: 96%

“…[1][2][3][4] Considerable effort has been put into reducing the stacking fault density to less than the critical value of 10 4 cm Ϫ2 in order to obtain a laser diode with no extended defects in its stripe area ͑typically, 10 mϫ600 m͒. At present, a 100 h lifetime continuouswave laser diode operating at room temperature has been achieved with a stacking fault density lower than 3 ϫ10 3 cm…”

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confidence: 99%

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Defect annealing in a II–VI laser diode structure under intense optical excitation

Jordan

Fewer

Donegan

et al. 1998

Applied Physics Letters

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Defect annealing under intense pulsed optical excitation has been observed in a II-VI laser diode structure at room temperature. More than one order of magnitude increase in photoluminescence intensity has been obtained when the annealed area is probed at low excitation intensity. High-resolution confocal photoluminescence images of the annealed region do not show any sign of degradation. Together, these results suggest that an initial density of intrinsic point defects present within the active region can be removed by the optical annealing. Recombination-enhanced defect reactions in the vicinity of the point defects are responsible for this nonthermal annealing effect. © 1998 American Institute of Physics. ͓S0003-6951͑98͒00502-6͔Macroscopic defects originating at the GaAs/ZnSe heterointerface such as stacking faults and threading dislocations have been recognized to be the main cause of the rapid degradation and, therefore, the very short operating lifetime of II-VI-based laser diodes.1-4 Considerable effort has been put into reducing the stacking fault density to less than the critical value of 10 4 cm Ϫ2 in order to obtain a laser diode with no extended defects in its stripe area ͑typically, 10 mϫ600 m͒. At present, a 100 h lifetime continuouswave laser diode operating at room temperature has been achieved with a stacking fault density lower than 3 ϫ10 3 cm Ϫ2. 5 For further improvement, slower degradation mechanisms, such as point defect diffusion and reaction, need better understanding.It has been shown recently that recombination-enhanced defect reaction ͑REDR͒ is the driving force of the degradation in relatively long-lived II-VI light-emitting diodes. Recombination-enhanced processes in semiconductors have been thoroughly studied over the years.7-9 REDR describes how the energy released by nonradiative carrier trapping at point defect sites can excite localized vibrational modes of the defect and of the surrounding atoms, before being dissipated through lattice phonons. This energy can be used to promote defect motion and reaction, inducing defect multiplication ͑degradation͒, or, alternatively, defect reduction ͑annealing͒.In this letter we report an improvement in photoluminescence ͑PL͒ efficiency in a II-VI laser diode structure using high intensity laser excitation. Instead of observing degradation, we find that the PL efficiency increases as a function of time through optical annealing of the II-VI material. PL maps of the annealed area were also performed using a confocal microscope 10 setup ͑0.5 m resolution͒ and show that no degradation occurred in the active region during the annealing process.The sample studied was a ZnCdSe/ZnSSe/ZnMgSSe single quantum well separate-confinement heterostructure ͑SCH͒ grown by molecular beam epitaxy ͑MBE͒. The SCH structure is similar to the laser structure reported before, 5 except that a part of the p-type layer has been removed by chemical etching to allow optical pumping to be performed. The sample was annealed at room temperature by optical excitation using...

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Section: ϫ2mentioning

confidence: 96%

mentioning

confidence: 99%

Defect annealing in a II–VI laser diode structure under intense optical excitation

Jordan

Fewer

Donegan

et al. 1998

Applied Physics Letters

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“…Analysis of the experimental data by means of formula (1) showed that the main effect of the external pressure is a very strong decrease of the Hall mobility (as well as µ 2D mobility) from a value of the order of 10 4 cm 2 /Vs down to about 20 -50 cm 2 /Vs (shown for a representative sample in Fig. 7).…”

Section: B Magnetotransport Study Under Pressurementioning

confidence: 99%

“…These strains are relaxed by formation of structural defects like stacking faults and dislocations. Existing stacking faults and other defects near the interface, like the case of ZnSe grown on GaAs [1][2][3][4][5][6][7] are frequently the sources of new dislocations which propagate from the interface into the epitaxial epilayer [19] sometimes leading to internal micro-cracks.…”

Section: Properties Of the Samples After Pressure Treatmentmentioning

confidence: 99%

“…Several reports on ZnSe-based heterostructures have shown that formation of structural defects at the ZnSe/GaAs interface plays a crucial role in the degradation process [1][2][3][4][5][6][7]. Strains induced by the lattice mismatch between the substrate and the epilayer lead to creation of many crystal defects (point defects, dislocations, V-shape stacking faults etc) near the interface.…”

Section: Introductionmentioning

confidence: 99%

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Effect of hydrostatic pressure on degradation of CdTe/CdMgTe heterostructures grown by molecular beam epitaxy on GaAs substrates

Wasik

Baj

Siwiec-Matuszyk

et al. 2001

Journal of Applied Physics

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We have shown that external hydrostatic pressure leads to the creation of structural defects, mainly in the vicinity of the II-VI/GaAs interface in the CdTe/Cd 1-x Mg x Te heterostructures grown by the molecular beam epitaxy method on GaAs substrates.These defects propagating across the epilayer cause permanent damage to the samples from the point of view of their electrical properties. In contrast, photoluminescence spectra are only weakly influenced by pressure. Our results shed light on the degradation process observed even without pressure in II-VI -based heterostructures.2

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Device characteristics and degradation of ZnMgSSe-based semiconductor lasers

Nakano

Ishibashi

1998

Electron. Comm. Jpn. Pt. II

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Static characteristics such as the threshold current density and optical output of the II‐VI family laser diodes, promising as a light source for high‐density optical disk systems, have reached levels comparable to those of the III‐V family laser diodes. Improvement of device lifetime is the important subject for practical devices. By means of an analysis of degradation and optimization of the growth method, the rapid degradation mode caused by stacking faults seen in the early devices can now be avoided. At present, due to the rather slow degradation mode related to point defects, the life is extended to 100‐h operation at room temperature. A defect model based on the recombination‐enhanced defect reaction is proposed. It is shown that the two degration modes presently observed can be described well by this model. Further, it is made clear that no catastrophic degradation mode occurs under high injection conditions of up to 1.3 kA/cm2 in the II‐VI devices and that there is no fatal instability inherent in the material in practice. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(6): 27–34, 1998

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Degradation of II-VI based blue-green light emitters

Cited by 230 publications

References 11 publications

Defect annealing in a II–VI laser diode structure under intense optical excitation

Defect annealing in a II–VI laser diode structure under intense optical excitation

Effect of hydrostatic pressure on degradation of CdTe/CdMgTe heterostructures grown by molecular beam epitaxy on GaAs substrates

Device characteristics and degradation of ZnMgSSe-based semiconductor lasers

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