Degradation of electrical properties of silicon detectors under 3MeV proton irradiation

Radiation hardness of the electrical properties of carbon nanotube network field effect transistors under high-energy proton irradiation

“…Many studies on the effects of proton irradiation on silicon-based devices [10,11], solar cells [12,13], GaAs systems [14,15], and GaN systems [16,17] have been reported. In particular, Srour and McGarrity [18] reviewed the effects of radiation and damage mechanisms in some of the most commonly employed device materials such as Si, SiO 2 , and GaAs, as well as silicon MOS devices, GaAs devices, optoelectronic devices, etc.…”

Measurement of strong gamma fields by silicon detectors working in a current-generation mode

“…After irradiation, the slope of the 1/C 2 (V) dependences (Fig. 2, curves 1, 2, 3, 4 Gamma-ray intensity [kRad/h] 5 1 0 1 5 2 0 2 5 Fig. 1.…”

“…The influence of the gamma irradiation on the macroscopic properties of silicon detectors is obtained by I-V and C-V measurements [4,5]. Information in detail (energy position, concentration and capture cross-section of the traps) for the different kinds of defects in n-type silicon is obtained by DLTS and thermally stimulated current (TSC) measurements [6][7][8][9][10].…”

Improvements in Realizing 4H-SiC Thermal Neutron Detectors

“…However, conventional semiconductors, such as silicon (Si) and gallium arsenide (GaAs), are still too sensitive to be used in hostile environments [1][2][3] where high temperature and high radiation fluxes exist. Moreover, the dark current in Si generally confines Si detector operation to room temperature operation due to the relatively large thermal generation of charge carriers at temperatures as low as 30-40 • C.…”