Degradation of bipolar junction transistors under dynamic high current stress and biased in open-collector condition

Chang, Ping Chen; Jang, Sheng‐Lyang; Chen, Young-Shying

doi:10.1016/0038-1101(94)90082-5

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…Past experimental results have shown that the performance of an HBT degrades in several ways whilst forward biased and current stressed. Stressing increases both the base leakage current at low bias and the base saturation current and causes the emitter resistance to change [3,4]. A further effect of current stressing is an observed positive shift in the emitter/base voltage, which was attributed to Be diffusion [5] from the base.…”

Section: Introductionmentioning

confidence: 99%

Degradation of AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors under high current stress

Masum

Hall

1997

Semicond. Sci. Technol.

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The effect of current stressing on the degradation of the current-voltage characteristics of carbon-doped base AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) is reported here. The devices tested comprised the following: compositionally graded and abrupt emitter/base junction AlGaAs/GaAs HBTs and emitter edge thinned (EET) compositionally graded junction AlGaAs/GaAs and InGaP/GaAs HBTs. Results for the EET and InGaP/GaAs devices are presented here for the first time.It is shown experimentally that after current stressing the base current of graded junction AlGaAs/GaAs HBTs increases appreciably whilst its collector current shows little change. The lower potential faced by the carriers of the graded junctions increases the recombination at the surface and stressing increases the heterointerface trap density, which accounts for the device deterioration. Eventually these devices exhibit a current gain degradation, as well as an increased turn-on voltage.The superior stability of the abrupt junction AlGaAs/GaAs and InGaP/GaAs HBT to current stressing is demonstrated over periods of more than 50 h; no notable changes in the base and collector currents were observed. Nevertheless, the InGaP/GaAs system is preferable to an abrupt AlGaAs/GaAs system due to its lower value of turn-on voltage and reduced surface trap density.

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Section: Introductionmentioning

confidence: 99%

Degradation of AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors under high current stress

Masum

Hall

1997

Semicond. Sci. Technol.

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A large-signal RF reliability study of complementary SiGe HBTs on SOI intended for use in wireless applications

Seth

Thrivikraman

Cheng

et al. 2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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For the first time, a large-signal RF stress study of complementary (npn + pnp) SiGe HBTs on thick-film SOI is performed, and analyses based on device physics are presented, shedding light on the observed failure mechanisms of these C-SiGe HBTs at very high RF input power. Two types of npn SiGe HBTs, low-breakdown voltage (LVNPN) and high-breakdown voltage (HVNPN) devices, as well as a high-breakdown voltage pnp SiGe HBT (HVPNP) in a 250 nm C-SiGe on SOI process are investigated. It is shown that the HVPNP can withstand aggressive RF stress for longer periods of time, compared with the LVNPN and the HVNPN, which succumb to several interesting modes of catastrophic device failure. A case is made for the use of pnp SiGe HBTs in sensitive RF front-ends that may be exposed to non-limited high RF power due to leakages in the transmit/receive (T/R) path or RF reflections.

show abstract

Degradation of bipolar junction transistors under dynamic high current stress and biased in open-collector condition

Cited by 2 publications

References 11 publications

Degradation of AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors under high current stress

Degradation of AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors under high current stress

A large-signal RF reliability study of complementary SiGe HBTs on SOI intended for use in wireless applications

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