2011
DOI: 10.1016/j.sse.2010.11.013
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Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation

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Cited by 8 publications
(1 citation statement)
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“…There are two modes for the characteristic degradations of low-temperature poly-Si thin-film transistors: the Joule-heating and hot-carrier degradations. 23,24) We investigated the characteristic degradations in detail, sorted the stress voltage conditions for the Joule-heating and hotcarrier degradations, which were systematically evaluated elsewhere, 25) and decided to utilize the Joule-heating degradation for the artificial neural networks. This is preferable because the characteristic degradations are symmetrical, 25) and electric currents flow in alternating directions through the synapse transistors.…”
Section: Neuron and Synapsementioning
confidence: 99%
“…There are two modes for the characteristic degradations of low-temperature poly-Si thin-film transistors: the Joule-heating and hot-carrier degradations. 23,24) We investigated the characteristic degradations in detail, sorted the stress voltage conditions for the Joule-heating and hotcarrier degradations, which were systematically evaluated elsewhere, 25) and decided to utilize the Joule-heating degradation for the artificial neural networks. This is preferable because the characteristic degradations are symmetrical, 25) and electric currents flow in alternating directions through the synapse transistors.…”
Section: Neuron and Synapsementioning
confidence: 99%