Degradation behavior of electrical properties of inverted metamorphic tri-junction solar cells under 1 MeV electron irradiation

Zhang, Yanqing; Wu, Yiyong; Zhao, Haidong; Sun, Chengyue; Xiao, Jing; Geng, Haoran; Xue, Jianwen; Lu, Jianfeng; Wang, Yi

doi:10.1016/j.solmat.2016.08.006

Cited by 24 publications

(11 citation statements)

References 15 publications

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“…The main type of defects introduced via beam irradiation of charged particles in solar cell materials corresponds to displacement damage, including vacancies and interstitials. [ 28,29 ] The displacement damage dose ( DDD ) approach is used to evaluate the degradation of solar cells as an effective method. [ 30,31 ] Nonionizing energy‐loss ( NIEL) corresponds to the energy lost by an electron while penetrating the material.…”

Section: Resultsmentioning

confidence: 99%

Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells

Zhang

Zhou

Liu

et al. 2022

Physica Status Solidi (a)

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Herein, 1‐MeV electron irradiation is conducted to the AlGaInP (1.89 eV)/AlInGaAs (1.45 eV)/InGaAs (1.14 eV)/Ge (0.67 eV) upright metamorphic four‐junction (UMM4J) solar cell and its upper three key subcells. Light IV (LIV), external quantum efficiency (EQE), and deep level transient spectroscopy (DLTS) measurements are implemented to analyze the degradation of electric properties and evolution of defects of the UMM4J solar cell. The LIV results illustrate that the short circuit current (Isc), open circuit voltage (Voc), and maximum power (Pmax) degrade as a function of the logarithmic change of the electron fluence. EQE curves confirm the excellent anti‐irradiation characteristic of the AlGaInP (1.89 eV) subcell. Three types of electron traps E1 (Ec–0.16 eV), E2 (Ec–0.47 eV), and E3 (Ec–0.55 eV) are detected in the AlGaInP subcell. Two types of hole traps H1 (Ev + 0.35 eV) and H2 (Ev + 0.70 eV) are discovered in the AlInGaAs subcell and two types of hole traps H3 (Ev + 0.05 eV) and H4 (Ev + 0.36 eV) are observed in the InGaAs subcell. Nonionizing energy loss (NIEL) of 1‐MeV electrons in are calculated via Screened Relativist method. The defect concentrations show an approximately linear relationship with the displacement dose.

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Section: Resultsmentioning

confidence: 99%

Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells

Zhang

Zhou

Liu

et al. 2022

Physica Status Solidi (a)

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“…Here, we report some significant results among the many that have been achieved on the radiation resistance of MJSCs. [37,38,[136][137][138] In particular, Sharp et al [37] performed a study concerning the degradation of the PV parameters (short circuit current I SC , V OC , and maximum power P MAX ) of a lattice matched GaInP/GaAs/Ge 3JSC under irradiation by protons (with energies and fluences ranging, respectively, from 50 keV to 10 MeV and from ≈ 10 9 to ≈ 10 13 particles cm −2 ) and electrons (with energies of 1, 2, and 12 MeV and at fluences between ≈10 13 and ≈10 16 particles cm −2 ). As shown in Figure 4a-f, at fixed energy values for both ionizing radiations, the performance of the SC decreases with increasing fluences.…”

Section: Radiation Resistance Of Space Mjscsmentioning

confidence: 99%

Solar Energy in Space Applications: Review and Technology Perspectives

Verduci

Romano

Brunetti

et al. 2022

Advanced Energy Materials

102

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Solar cells (SCs) are the most ubiquitous and reliable energy generation systems for aerospace applications. Nowadays, III–V multijunction solar cells (MJSCs) represent the standard commercial technology for powering spacecraft, thanks to their high‐power conversion efficiency and certified reliability/stability while operating in orbit. Nevertheless, spacecraft companies are still using cheaper Si‐based SCs to amortize the launching costs of satellites. Moreover, in recent years, new SCs technologies based on Cu(In,Ga)Se2 (CIGS) and perovskite solar cells (PSCs) have emerged as promising candidates for aerospace power systems, because of their appealing properties such as lightweightness, flexibility, cost‐effective manufacturing, and exceptional radiation resistance. In this review the current advancements and future challenges of SCs for aerospace applications are critically discussed. In particular, for each type of SC, a description of the device's architecture, a summary of its performance, and a quantitative assessment of the radiation resistance are presented. Finally, considering the high potential that 2D‐materials (such as graphene, transition metal dichalcogenides, and transition metal carbides, nitrides, and carbonitrides) have in improving both performance and stability of SCs, a brief overview of some important results concerning the influence of radiation on both 2D materials‐based devices and monolayer of 2D materials is also included.

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“…The minority carrier lifetimes in the active layers of a solar cell are important parameters for evaluating the cell efficiency. Many studies have demonstrated that electron irradiation causes degradation of solar cell performance at the end‐of‐life (EOL) condition due to the irradiation generated displacement defects which form non‐radiative recombination centers and reduce the minority carrier lifetime 20‐22 . When the energy and type of the incident particles remained constant, the recombination center density was proportional to the irradiation particle fluence, which can be expressed by the equation N t = kφ , where N t is the density of the recombination center, φ is the fluence of the incident particle, and k is the number of non‐ionized recombination centers introduced by each particle on a unit path 23 .…”

Section: Simulation and Experimentsmentioning

confidence: 99%

Investigation of degradation characteristics of electron irradiated GaInP/InGaAs/Ge solar cell by numerical simulation model

Zhang

Aierken

Zhuang

et al. 2022

Intl J of Energy Research

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Summary The degradation characteristics of lattice‐matched (LM) GaInP/InGaAs/Ge solar cell under 1 MeV electron irradiation are numerically simulated using APSYS finite element analysis software and Essential Macleod Program. Main output parameters of solar cells are simulated based on the material energy band, minority carrier lifetime, and interface surface recombination velocity. The results show that the adverse effects of the displacement damages in solar cell materials induced by irradiation are the primary reasons for overall cell performance degradation. The minority carrier lifetime degraded mostly in InGaAs middle subcell after irradiation, and it became to the current‐limiting unit in the end‐of‐life condition. The simulation results of the current‐voltage curves and the external quantum efficiency spectra are well agreed with the irradiation experimental data under similar conditions. Furthermore, an approach to radiation hardening of LM GaInP/InGaAs/Ge solar cell by adjusting the base and emitter layer thickness in the InGaAs middle subcell is proposed based on this model.

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Degradation behavior of electrical properties of inverted metamorphic tri-junction solar cells under 1 MeV electron irradiation

Cited by 24 publications

References 15 publications

Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells

Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four‐Junction (UMM4J) Solar Cells

Solar Energy in Space Applications: Review and Technology Perspectives

Investigation of degradation characteristics of electron irradiated GaInP/InGaAs/Ge solar cell by numerical simulation model

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