2023
DOI: 10.1016/j.solener.2023.05.052
|View full text |Cite
|
Sign up to set email alerts
|

Degradation behavior of CIGS solar Cells: A parametric analysis

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 38 publications
0
1
0
Order By: Relevance
“…In contrast, a ZnMgO buffer with a wide bandgap of at least 3.3 eV, depending on the ratio of Zn and Mg, can effectively reduce the parasitic absorption loss in the short-wavelength region when applied to IZO/microgrid hybrid electrode-based CIGS solar cells. To develop a highly efficient CIGS solar cell with ZnMgO buffer layer, the conduction band offset between ZnMgO and CIGS should be designed within 0–0.3 eV. The CIGS absorber with a Ga grading profile, shown in Figure S6, was fabricated to optimize the conduction band offset between ZnMgO and CIGS, and ZnMgO with a thickness of 50 nm and the Zn-to-Mg ratio shown in Figure S7 was deposited through an atomic-layer deposition (ALD) process. The photovoltaic characteristics of the CIGS solar cells based on the ZnMgO and CdS buffer layers were compared by applying a microgrid electrode with 1500 μm spacing (optimized grid spacing in Figure b), and the photovoltaic properties of the two devices were measured.…”
Section: Results and Discussionmentioning
confidence: 99%
“…In contrast, a ZnMgO buffer with a wide bandgap of at least 3.3 eV, depending on the ratio of Zn and Mg, can effectively reduce the parasitic absorption loss in the short-wavelength region when applied to IZO/microgrid hybrid electrode-based CIGS solar cells. To develop a highly efficient CIGS solar cell with ZnMgO buffer layer, the conduction band offset between ZnMgO and CIGS should be designed within 0–0.3 eV. The CIGS absorber with a Ga grading profile, shown in Figure S6, was fabricated to optimize the conduction band offset between ZnMgO and CIGS, and ZnMgO with a thickness of 50 nm and the Zn-to-Mg ratio shown in Figure S7 was deposited through an atomic-layer deposition (ALD) process. The photovoltaic characteristics of the CIGS solar cells based on the ZnMgO and CdS buffer layers were compared by applying a microgrid electrode with 1500 μm spacing (optimized grid spacing in Figure b), and the photovoltaic properties of the two devices were measured.…”
Section: Results and Discussionmentioning
confidence: 99%