Degradation and spectral–spatial characteristics of the radiation of high-power laser diodes

Bliznyuk, V. V.; Brit, M. A.; Gadaev, I. S.; Koval, O. I.; Rzhanov, A. G.; Solovyev, G. A.; Стародумов, А.А.

doi:10.3103/s1062873815120096

Cited by 9 publications

(4 citation statements)

References 8 publications

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“…The reason for this phenomenon is the low coherence length of LD radiation (about 1-5 sm) which prohibits the phase locking between channels. Calculations and experiment show that at a cavity length of 1000 microns, and the width of the active region of the LD resonator of 100 µm not less than 3 channels is shaped [8][9]. The solution of this problem, associated with forced separation of the channels, does not lead to adequate results of calculations, although for some cases allows to qualitatively describing the dynamic pattern of switching between the channels and transverse modes [9].…”

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confidence: 99%

“…Calculations and experiment show that at a cavity length of 1000 microns, and the width of the active region of the LD resonator of 100 µm not less than 3 channels is shaped [8][9]. The solution of this problem, associated with forced separation of the channels, does not lead to adequate results of calculations, although for some cases allows to qualitatively describing the dynamic pattern of switching between the channels and transverse modes [9]. The model as a self-consistent set of equations grows several times in this approach, as the number of equations (1) in the model must match the number of channels.…”

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confidence: 99%

“…Powerful injection laser: contacts (1), contact layer (2), insulating layer (3), P -emitter (4), waveguide layers (5,7), QW layer (6), N -emitter (8), substrate (9), mirrors (R1, R2) [7].…”

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The features of modelling semiconductor lasers with a wide contact

Rzhanov¹

2017

EPJ Web Conf.

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Abstract. The aspects of calculating the dynamics and statics of powerful semiconductor laser diodes radiation are investigated. It takes into account the main physical mechanisms influencing power, spectral composition, far and near field of laser radiation. It outlines a dynamic distributed model of a semiconductor laser with a wide contact and possible algorithms for its implementation.Semiconductor laser diodes (LD) appeared in the early 60-ies of the last century [1][2]. In 1969, due to double heterostructure implementation continuous wave (CW) LD operation at room temperature were obtained [3][4], and then the process of the LD technology development started. In the 80-ies of the last century the first works on mathematical modeling of LD dynamic and static behavior appeared [5][6].One of the modern designs of the powerful LD with quantum well (QW) active layer and wide contact is shown in Fig. 1. Contact width w in the 8-10 W LD is about 100 µm. Fig. 1. Powerful injection laser: contacts (1), contact layer (2), insulating layer (3), P -emitter (4), waveguide layers (5,7), QW layer (6), N -emitter (8), substrate (9), mirrors (R1, R2) [7].The basis of the LD models are kinetic (speed) equations that describe the balance of non-equilibrium injected carriers and photons in the active region of the laser. In their simplest form these equations write for the average values, not taking into account the spatial distribution of carriers and the optical field. In more detailed, self-consistent, models of LD the spatial interaction between the laser radiation and carriers takes into account. At other side, the waveguide permittivity profile and effective index depends on the concentration of carriers in active layer.The number of kinetic equations in the model must match the number of lateral modes that have fallen through the generation threshold. The set of equations for carriers and

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The features of modelling semiconductor lasers with a wide contact

Rzhanov¹

2017

EPJ Web Conf.

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“…To solve this problem, it is necessary to know which physical processes lead to the degradation of laser diodes. A study of degradation expressions and forms, carried out in [1][2], showed that its main cause is the gradual change in stresses in quantum-well semiconductor layers due to the difference in the parameters of the crystal lattices forming the active and emitter regions. Despite the efforts made by technologists to improve the quality of the layers by selecting suitable combinations of materials and improving their structure due to technological developments [3][4], defect formation processes in quantum-well active layers are difficult to predict.…”

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Determination of QW laser diode degradation based on the emission spectrum

et al. 2017

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Abstract. The possibility of laser diodes degradation control by monitoring of their spectrum is shown. For red and infra-red laser diodes, the time dependence of the radiation spectrum width was obtained.Laser diodes of small and medium power (1-100 mW) are widely used as radiation sources in various complexes in metrology, medicine, optical transmission and information recording, and in many others. An important problem in the operation of these devices is the prediction of their service life and the determination of the operating time through which their substitution is required. To solve this problem, it is necessary to know which physical processes lead to the degradation of laser diodes. A study of degradation expressions and forms, carried out in [1-2], showed that its main cause is the gradual change in stresses in quantum-well semiconductor layers due to the difference in the parameters of the crystal lattices forming the active and emitter regions. Despite the efforts made by technologists to improve the quality of the layers by selecting suitable combinations of materials and improving their structure due to technological developments [3][4], defect formation processes in quantum-well active layers are difficult to predict. To predict laser operating time by the initial parameters, such as the output power, efficiency, wavelength and the degree of polarization of radiation specified in the instrument's passport is appeared to be impossible. Accelerated testing of the laser diode, conducted selectively, allow to detect changes in these parameters during the operation of the device, which, when generalizing the results of such measurements, makes it possible to predict the service life of a set of lasers. Therefore, it is very important for consumers to obtain techniques based on such a generalization. At present a number of methods for diagnosing the state of laser diodes have been developed. Despite that many of them are of interest from the point of view of physical or mathematical models, the question arises of their practical applicability. In our opinion, it is possible to obtain sufficiently complete information on the change in the state of the laser diode as the operating time increases, by its spectral characteristics analysis.In this paper, we studied the spectral characteristics of two sets of eight and four laser diodes KLM650-5-5 and KLM980-5-15, respectively, generating red (650 nm middle wavelength) and infrared (980 nm) light. Laser modules were studied during the year and were exploited for 15 hours weekly. Every week during the single measurement, they were subjected to a three-fold heating to 70°C and cooling to -10°C. These temperatures were

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