2015
DOI: 10.1016/j.matlet.2015.05.055
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Degradation and device physics modeling of TiO2/CZTS ultrathin film photovoltaics

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Cited by 24 publications
(2 citation statements)
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References 21 publications
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“…7, the loglinear plot (Ln(I)-V) is non-linear. 27 This work does not wish to examine situations where conventional I-V-T approaches are problematic, and where the approach in this paper is better. For example, interfacial trap recombination, trapped charge, series resistance, shunt resistance can be modeled accurately by a numerical drift-diffusion model, but temperaturedependent SBH is also modeled accurately by it.…”
Section: Methodsmentioning
confidence: 99%
“…7, the loglinear plot (Ln(I)-V) is non-linear. 27 This work does not wish to examine situations where conventional I-V-T approaches are problematic, and where the approach in this paper is better. For example, interfacial trap recombination, trapped charge, series resistance, shunt resistance can be modeled accurately by a numerical drift-diffusion model, but temperaturedependent SBH is also modeled accurately by it.…”
Section: Methodsmentioning
confidence: 99%
“…Specifically, the CZTS/ZnSnO junction exhibited power conversion efficiencies comparable to those of CZTS/CdS junction . Among the other possibly suitable n-type semiconductors, recent theoretical models indicate TiO 2 as one of the best candidates to be coupled with CZTS. TiO 2 has been widely employed in dye-sensitized solar cells (DSSC) and perovskite solar cells because of its transparency, transport properties and low-cost precursors, but very little experimental evidence has been recorded of TiO 2 coupled with CIGS or CZTS in a p–n junction. Calculations of Bencherif and co-workers indicate that a CZTS/TiO 2 junction could lead to a ∼ 5% V oc gain compared to canonical CZTS/CdS, while the simulated optimized solar cell should be able to overcome also the experimental record Fill Factor (FF) values leading to the overall power efficiency of ∼15% . On the other hand, Nisika and co-workers widely studied the properties of the CZTS/amorphous-TiO 2 where a favorable spike-like effect at the p–n junction interface leads to an offset conduction band value of 0.17 eV.…”
mentioning
confidence: 99%