Degradation Analysis of InP Buried Heterostructure Layers in Lasers Using Optical-Beam-Induced-Current Technique

Takeshita, Toru; Sato, Tomonori; Mitsuhara, Manabu; Kondo, Y.; Oohashi, H.

doi:10.1109/tdmr.2009.2025490

Cited by 6 publications

(3 citation statements)

References 18 publications

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“…In this context, 1P OBIC microscopy has been implemented for rapid examination of semiconductor lasers (Stanciu & Botez, 2002; Takeshita et al, 2006). For example, investigation on the InP buried heterostructures in InAs/InP highly strained distributed feedback (DFB) laser revealed that the OBIC intensity increased with the aging of the material (Takeshita et al, 2010). It also highlighted the decrease in the number of carriers around the p‐type material of the mesa side wall as well as in the p‐type material of InP with aging.…”

Section: Microscopic Measurements Of Obicmentioning

confidence: 99%

An insight into optical beam induced current microscopy: Concepts and applications

Zhuo

Banik

Kao

et al. 2022

Microscopy Res & Technique

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Laser scanning optical beam induced current (OBIC) microscopy has become a powerful and nondestructive alternative to other complicated methods like electron beam induced current (EBIC) microscopy, for high resolution defect analysis of electronic devices. OBIC is based on the generation of electron–hole pairs in the sample due to the raster scanning of a focused laser beam with energy equal or greater than the band gap energy and synchronized detection of resultant current profile with respect to the beam positions. OBIC is particularly suitable to localize defect sites caused by metal–semiconductor interdiffusion or electrostatic discharge (ESD). OBIC signals, thus, are capable of revealing the parameters/factors directly related to the reliability and efficiency of the electronic device under test (DUT). In this review, the basic principles of OBIC microscopy strategies and their notable applications in semiconductor device characterization are elucidated. An overview on the developments of OBIC microscopy is also presented. Specifically, the recent progresses on the following three OBIC measurement strategies have been reviewed, which include continuous laser based single photon OBIC, pulsed laser based single photon OBIC, and multiphoton OBIC microscopy for three‐dimensional mapping of photocurrent response of electronic devices at high spatiotemporal resolution. Challenges and future prospects of OBIC in characterizing complex electronic devices are also discussed. Highlights Characterization of electronic device quality is of paramount importance. Optical beam induced current (OBIC) microscopy offers spatially resolved mapping of local electronic properties. This review presents the principle and notable applications of OBIC microscopy.

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Section: Microscopic Measurements Of Obicmentioning

confidence: 99%

An insight into optical beam induced current microscopy: Concepts and applications

Zhuo

Banik

Kao

et al. 2022

Microscopy Res & Technique

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show abstract

“…3.23, in the second-stage degradation, the operating current was increased by two different characteristics [39]: namely those of LDs with and without deviation from the t 0.5 deterioration. We concentrate on t 0.5 -deteriorationdeviation and conventional LDs, which are typical lasers with and without deviation from the t 0.5 deterioration, respectively.…”

Section: Inp Layer Degradationmentioning

confidence: 99%

“…3.24a. The short broken, solid, and long broken lines are the vertical profiles of the relative OBIC intensity before aging, the relative OBIC intensity after aging, and the relative OBIC intensity difference before and after aging, respectively (Modified from Takeshita et al [39]) n-type InP buried layer and the n-type InP substrate are isolated by the p-type InP buried layer, and the electrons generated in depletion layers (3) and (4) do not reach the n-type InP substrate. On the other hand, an additional OBIC generated around depletion layers (3) and (4) is obtained after aging.…”

Section: Inp Layer Degradationmentioning

confidence: 99%

Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication

Takeshita

2012

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

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By employing the optical-beam-induced current (OBIC) measurement technique, we have analyzed the sudden and wear-out failure of optical devices. The extent of the degraded region is estimated by using relative OBIC intensity prior to aging. The use of OBIC incident sources at several wavelengths enables us to detect degradation in facets, epitaxial layers, and the device interior. IntroductionOptical-beam-induced current (OBIC) measurement [1][2][3][4], as well as other approaches such as electron-beam-induced current (EBIC) measurement [5] and luminescence measurement [6], can determine the existence of deterioration in optical and electronic devices. Of these approaches, the OBIC technique has the advantages of being nondestructive and capable of selecting wavelengths [7].First, since the OBIC is measured through the window of a transistor outline (TO) can before and after aging, we are able to detect an OBIC change for several periods of aging. When there are nonradiative recombination centers in the degraded region, the OBIC intensity decreases as the recombination density increases [8]. The relative OBIC intensity prior to aging is useful for analyzing the degree of device degradation. Furthermore, the incident light that illuminates the facet is absorbed in the semiconductor. However, the lights incident on the top surface rather than the facet are absorbed in the layer to a depth of not more than a few micrometer. The OBIC measurement technique that involves illuminating the facet is therefore expected to be highly susceptible to degradation.

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Laser Diode Reliability

Fukuda¹,

Mura²

2021

Advanced Laser Diode Reliability

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Degradation Analysis of InP Buried Heterostructure Layers in Lasers Using Optical-Beam-Induced-Current Technique

Cited by 6 publications

References 18 publications

An insight into optical beam induced current microscopy: Concepts and applications

An insight into optical beam induced current microscopy: Concepts and applications

Failure Analysis Using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication

Laser Diode Reliability

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