Degradation analysis of GaAs solar cells at thermal stress

Papěž, Nikola; Sobola, Dinara; Škvarenina, Ľubomír; Škarvada, Pavel; Hemzal, Dušan; Tofel, Pavel; Grmela, Lubomír

doi:10.1016/j.apsusc.2018.05.093

Cited by 27 publications

(22 citation statements)

References 32 publications

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“…It is well known that the nucleation of ALD films of metal oxides on chemically inert sp 2 carbon surfaces is a very difficult task. It was shown that on untreated sp 2 carbon surfaces, the nucleation of films can be observed only at lattice defects or the edges of steps [ 29 , 30 , 31 , 32 , 33 , 34 ]. The heterostructure Bi 25 FeO 40 /rGO was obtained Wang Xingfu et al [ 32 ], where the BFO has phase transitions to the Bi 25 FeO 40 phase with the predominance of oxygen.…”

Section: Introductionmentioning

confidence: 99%

Surface Modification and Enhancement of Ferromagnetism in BiFeO3 Nanofilms Deposited on HOPG

et al. 2020

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BiFeO3 (BFO) films on highly oriented pyrolytic graphite (HOPG) substrate were obtained by the atomic layer deposition (ALD) method. The oxidation of HOPG leads to the formation of bubble regions creating defective regions with active centers. Chemisorption occurs at these active sites in ALD. Additionally, carbon interacts with ozone and releases carbon oxides (CO, CO2). Further annealing during the in situ XPS process up to a temperature of 923 K showed a redox reaction and the formation of oxygen vacancies (Vo) in the BFO crystal lattice. Bubble delamination creates flakes of BiFeO3-x/rGO heterostructures. Magnetic measurements (M–H) showed ferromagnetism (FM) at room temperature Ms ~ 120 emu/cm3. The contribution to magnetization is influenced by the factor of charge redistribution on Vo causing the distortion of the lattice as well as by the superstructure formed at the boundary of two phases, which causes strong hybridization due to the superexchange interaction of the BFO film with the FM sublattice of the interface region. The development of a method for obtaining multiferroic structures with high FM values (at room temperature) is promising for magnetically controlled applications.

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Section: Introductionmentioning

confidence: 99%

Surface Modification and Enhancement of Ferromagnetism in BiFeO3 Nanofilms Deposited on HOPG

et al. 2020

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“…As one of the most important III–V compound semiconductors, gallium arsenide (GaAs) has many applications in optical and electronic devices [1,2,3]. To satisfy the increasingly high-quality product requirement, lots of research has been devoted to the study of crystalline structural, electronic, optical, as well as mechanical properties [4,5,6,7,8] of GaAs.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Behavior of Undoped n-Type GaAs under the Indentation of Berkovich and Flat-Tip Indenters

Kong

Zhao

et al. 2019

Materials

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In this research, the mechanical behavior of undoped n-type GaAs was investigated by nanoindentation experiments using two types of indenters—Berkovich and flat-tip—with force applied up to 1000 mN. From the measured force-depth curves, an obvious pop-in phenomenon occurred at force of 150 mN with the flat-tip indenter representing elastic–plastic transition. The Young’s modulus and hardness of GaAs were calculated to be 60–115 GPa and 6–10 GPa, respectively, under Berkovich indenter. Based on the observation of indent imprints, the fracture characteristics of GaAs were also discussed. A recovery of crack by the next indentation was observed at 1000 mN with Berkovich indenter. In the case of flat-tip indentation, however, surface material sank into a wing shape from 400 mN. In this sinking region, a density of fork-shaped sinking, slip lines, and crossed pits contributed to the slip bands, and converging crossed twinning deformations inside the GaAs material were generated. Since cracks and destructions on GaAs surface took place more easily under the flat-tip indentation than that of Berkovich, a machining tool with a sharp tip is recommended for the mechanical machining of brittle materials like GaAs.

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“…While FWHMs of diffraction peak (101) for same samples were 0.5⁰, 0.6⁰ and 0.5⁰. The crystallite size of crystalline materials can be calculated from the FWHMs and 2θ of the diffraction peaks using the Scherrer's formula [24,25]…”

Section: Results and Analysis 31 Physical Characterizationmentioning

confidence: 99%

The physical and optical properties of AZO thin films on teflon substrate at low deposition temperature by spray pyrolysis

Hazmin

Zahid

Sauki

et al. 2020

IJEECS

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<span>This paper presents the physical and optical properties of AZO thin films on Teflon substrate at low deposition temperature by spray pyrolysis. In this study, the effect of different process parameters such as spray time and substrate to nozzle distance on the physical and optical characteristic of aluminium doped zinc oxide (AZO) deposited on Teflon substrates was investigated. The AZO thin films were successfully deposited onto Teflon substrate by spray pyrolysis technique at low deposition temperature. The physical analysis by X-ray diffraction (XRD) shows that the deposited Teflon substrate films have a preferred orientation along the direction (100) and (101). Optical measurements were conducted using Jasco/V-670 Ex Uv-Vis-NIR Spectrophotometer model to confirms that in visible ray it is possible to get good reflectance of AZO films with a reflection of 80%. The values of band gaps Eg were calculated from the spectra of UV-Visible reflectance that were vary between 3.06 and 3.14 eV. </span>

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Degradation analysis of GaAs solar cells at thermal stress

Cited by 27 publications

References 32 publications

Surface Modification and Enhancement of Ferromagnetism in BiFeO3 Nanofilms Deposited on HOPG

Surface Modification and Enhancement of Ferromagnetism in BiFeO3 Nanofilms Deposited on HOPG

Mechanical Behavior of Undoped n-Type GaAs under the Indentation of Berkovich and Flat-Tip Indenters

The physical and optical properties of AZO thin films on teflon substrate at low deposition temperature by spray pyrolysis

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