Degeneracy effects on semiconductor surfaces

Zemel, J.N.; Kaplit, M.

doi:10.1016/0039-6028(69)90233-7

Cited by 21 publications

(4 citation statements)

References 12 publications

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“…The tangent of the lines from Figure 5 is equal to the exponent p in equation [5]. For the results presented in Figure 5 the parameter p was almost the same for all samples and any time of oxidation, attaining the value of 2.1±0.1, which is within the range expected by the theory for FCC absorption of IR radiation (13). The maximum absorbance observed during the oxidation in air corresponded to not more than a fraction of a monolayer of oxidized lead sulfide.…”

Section: Pbs Oxidation In Airsupporting

confidence: 69%

“…Optical properties of lead sulfide (including the absorption on FCCs) were intensively studied in the past (13), because PbS was used in the construction of photo-detecting devices in the IR range of the spectrum. Some data on the absorption of IR radiation due to the presence of FCCs in PbS, enabling the estimation of the dependence of absorption coefficient of FCCs in PbS on the wavelength, may be found in the literature (14,15).…”

Section: Free Charge Carrier Absorption Of Infra-red Radiation In Pbsmentioning

confidence: 99%

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Surface Stoichiometry of Lead Sulfide and the Sorption of Xanthates

Nowak

2006

ECS Trans.

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The measurements of the free charge carrier (FCC) absorption of the infra-red (IR) radiation during the oxidation of lead sulfide surface both in air and in aqueous solutions, either by dissolved oxygen or by anodic polarization, shows that the oxidation of PbS is always accompanied by the formation of metal-depleted layer at the surface. However the attained degree of non-stoichiometry is limited and the sulfur-enriched layer at the surface relaxes spontaneously with the formation of stoichiometric PbS and sulfur species. Oxidized PbS surfaces adsorb xanthate from deoxidized solutions easily and fast, even if the oxidized lead species have been removed from the surface. The electrosorption of xanthate radicals driven by the oxidation of xanthate ions by the sulfur species present at the surface seems to be the most probable explanation of that behavior.

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Section: Pbs Oxidation In Airsupporting

confidence: 69%

Section: Free Charge Carrier Absorption Of Infra-red Radiation In Pbsmentioning

confidence: 99%

Surface Stoichiometry of Lead Sulfide and the Sorption of Xanthates

Nowak

2006

ECS Trans.

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“…This technique has the potential to make significant contributions to the demonstrated for Ge [40,[47][48][49][50], Si [36,[51][52][53][54], PbSe [38,55], PbTe [39,56],…”

Section: Resultsmentioning

confidence: 99%

“…Experimental verifications of the models discussed in the previous section, especially the predicted reduced mobility and its exponential dependence upon inverse temperature, have appeared throughout the literature. Compound semiconductors reported to follow these models include: CdS [29,32,61,[103][104][105][106][107][108][109][110][111][112][113][114][115]; CdSe [64,115,116]; CdTe [118][119][120][121]; PbS [38,122]; PbSe [38,47,52,122,125]; PbTe [38,55,[126][127][128]; InAs [129]; InP [92,[130][131][132][133]; InSb [134][135][136]; CuxS [137][138][139]...…”

Section: B the Resultsmentioning

confidence: 99%

Electrical Properties of Polycrystalline Semiconductor Thin Films

Kazmerski¹

1980

Polycrystalline and Amorphous Thin Films and Devices

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Effect of magnetic quantization on the surface capacitance of MOS field-effect devices

Choudhury¹,

Chowdhury²,

Chakravarti³

et al. 1980

Phys. Stat. Sol. (a)

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In recent y e a r s there has been considerable interest in the study of semiconductor inversion l a y e r s which are formed at the surfaces of semiconductors in MOSFET devices under the influence of a sufficiently strong electric field applied normal to the surface by means of a large gate bias. In such layers, the c a r r i e r s form a two-dimensional gas and are free to move parallel to the surface while their motion is quantized in a direction perpendicular to it leading to the formation of electric sub-bands. This quantized motion gives rise to many special features of MOSFET devices /1, 2/. One such important feature is the dependence of the MOS capacitance on the gate voltage /3/.Recently, it has also been experimentally observed /4/ that the dependence of the MOS capacitance on the surface field becomes oscillatory in the pressence of a quantized magnetic field. This follows from further quantization /5/ of the electron motion parallel to the surface due to the presence of a magnetic field. However, a quantitative explanation of this oscillatory phenomenon has yet to be reported. In the present communication, an attempt is made to give such an explanation in a simplified manner. In what follows, we shall consider the surface capacitance of n-channel inversion l a y e r s on (100)-oriented p-type Si at low temperatures in the presence of a quantizing magnetic field applied parallel to the electric field in the direction normal to the surface.In the presence of a quantizing magnetic field, the number of electron states of the two-dimensional electron g a s per Landau level can be expressed as /I/ 1) 92 Achary Prafulla Chandra Road, Calcutta-'700009, India.

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Degeneracy effects on semiconductor surfaces

Cited by 21 publications

References 12 publications

Surface Stoichiometry of Lead Sulfide and the Sorption of Xanthates

Surface Stoichiometry of Lead Sulfide and the Sorption of Xanthates

Electrical Properties of Polycrystalline Semiconductor Thin Films

Effect of magnetic quantization on the surface capacitance of MOS field-effect devices

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