Definitive evidence of interlayer coupling between<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Mn</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">As</mml:mi></mml:mrow></mml:math>layers separated by a nonmagnetic spacer

Kirby, Brian J.; Borchers, J. A.; Liu, X.; Ge, Z.; Cho, Y. J.; Dobrowolska, Małgorzata; Furdyna, J. K.

doi:10.1103/physrevb.76.205316

Cited by 23 publications

(13 citation statements)

References 26 publications

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“…tization parallel to H, [25]. which can be model-tted using exact dynamical calculations [26] to determine the actual magnetizations of the individual GaMnAs layers within the trilayer structure [10].…”

Section: Magnetization Results Observed Onmentioning

confidence: 99%

“…Theoretical models predict both ferromagnetic (FM) and antiferromagnetic (AFM) interactions between the FMS layers, the type of inter-layer exchange coupling (IEC) being of course crucial to the device operation [58]. It has been shown in a number of studies that the type of IEC whether it is FM or AFM depends sensitively on the thickness and doping of the non-FM spacers between the FM layers [9,10].…”

Section: Introductionmentioning

confidence: 99%

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Exchange Coupling in Magnetic Semiconductor Multilayers and Superlattices

et al. 2012

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The study of ferromagnetic semiconductors continues to be of great interest because of their potential for spintronic devices. While there has been much progress in our understanding of ferromagnetic semiconductor materials particularly of the canonical IIIV system Ga1−xMnxAs many issues still remain unresolved. One of these is the nature of interlayer exchange coupling in GaMnAs-based multilayers, an issue that is important from the point of view of possible spintronic applications. In this connection, it is important to establish under what conditions the interlayer exchange coupling between successive GaMnAs layers is antiferromagnetic or ferromagnetic, since manipulation of such interlayer exchange coupling can then be directly applied to achieve giant magnetoresistance and other devices based on this material. In this review we will describe magneto-transport, magnetization, and neutron reectometry experiments applied to two types of GaMnAs-based multilayer structures superlattices and tri-layers consisting of GaMnAs layers separated by non-magnetic GaAs spacers. These measurements serve to identify conditions under which AFM coupling will occur in such GaMnAs/GaAs multilayer systems, thus providing us the information which can be used for manipulating magnetization (and thus also giant magnetoresistance) in structures based on the ferromagnetic semiconductor GaMnAs.

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Section: Magnetization Results Observed Onmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Exchange Coupling in Magnetic Semiconductor Multilayers and Superlattices

et al. 2012

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“…Earlier observations of AFM IEC in semiconducting ferromagnets were reported in rare-earth-based semiconductors, such as EuS/PbS or EuS/YbSe, in which the Curie temperatures (T C ) are as low as 18 K. 7,8 In structures involving diluted magnetic semiconductors (DMSs) such as GaMnAs, in which the T C can reach as high as 170 K by the careful optimization of engineering parameters, [9][10][11] only the FM IEC has been observed for a long time. [12][13][14][15][16] Part of the reason for this may be that it is very difficult to adequately describe and predict the properties of these DMS systems in theoretical calculations. In principle, magnetic interactions in DMSs are expected to possess similar characteristics as in the metallic systems based on the RKKY mechanism.…”

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confidence: 99%

Investigation of weak interlayer exchange coupling in GaMnAs/GaAs superlattices with insulating nonmagnetic spacers

Chung

Song

Yoo

et al. 2011

Journal of Applied Physics

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Articles you may be interested inExchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited) J. Appl. Phys. 97, 10D304 (2005); 10.1063/1.1846033 Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices J. Appl. Phys. 95, 7402 (2004); 10.1063/1.1676025 Ferromagnetism and interlayer exchange coupling in short-period (Ga,Mn)As/GaAs superlattices Appl. Phys. Lett. 81, 3013 (2002); 10.1063/1.1515368Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures A robust long-range antiferromagnetic coupling between ferromagnetic Ga 0.97 Mn 0.03 As layers has previously been realized via insertion of nonmagnetic Be-doped GaAs spacers between the magnetic layers. In this paper we report the observation of weak antiferromagnetic coupling between Ga 0.97 Mn 0.03 As layers through undoped GaAs spacers with thicknesses as large as 25 monolayers. The field and the temperature dependences of the sample magnetization suggest that the interlayer coupling in these systems substantially deviates from typical ferromagnetic behavior. Polarized neutron reflectivity measurements reveal antiferromagnetic alignment between Ga 0.97 Mn 0.03 As layers when a weak field is applied perpendicular to the magnetic easy axis during cooling below T C . The strength of the observed coupling between the magnetic layers is estimated to be weaker than 0.05 mT.

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“…Short-period superlattices formed the basis of neutron reflectivity studies of Szuszkiewicz et al 17 , who confirmed the ferromagneticonly interlayer coupling (mainly for 6 ML spacer). In the work of Kirby et al 18 neutron reflectometry and magnetization curve studies of trilayer structures were performed, in which the magnetization of top and bottom layer has been resolved. This indicated distinct ferromagnetic coupling through a spacer of large thickness (about 20 ML).…”

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Antiferromagnetic interlayer coupling in diluted magnetic thin films with RKKY interaction

Szałowski

Balcerzak

2009

Phys. Rev. B

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We study a model thin film containing diluted bilayer structure with the RKKY long-range interaction. The magnetic subsystem is composed of two magnetically doped layers, separated by an undoped nonmagnetic spacer and placed inside a wider film modelled by a quantum well of infinite depth. We focus our study on the range of parameters for which the antiferromagnetic coupling between the magnetic layers can be expected. The critical temperatures for such system are found and their dependence on magnetic layer thickness and charge carriers concentration is discussed. The magnetization distribution within each magnetic layer is calculated as a function of layer thickness. The external field required to switch the mutual orientation of layer magnetizations from antiferromagnetic to ferromagnetic state is also discussed.

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Definitive evidence of interlayer coupling betweenGa1−xMnxAslayers separated by a nonmagnetic spacer

Cited by 23 publications

References 26 publications

Exchange Coupling in Magnetic Semiconductor Multilayers and Superlattices

Exchange Coupling in Magnetic Semiconductor Multilayers and Superlattices

Investigation of weak interlayer exchange coupling in GaMnAs/GaAs superlattices with insulating nonmagnetic spacers

Antiferromagnetic interlayer coupling in diluted magnetic thin films with RKKY interaction

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