Defects in ZnO

McCluskey, M. D.

doi:10.1016/b978-0-08-102053-1.00001-6

Cited by 17 publications

(13 citation statements)

References 59 publications

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“…It is obvious that each PL spectrum in Figure 3 consists of an ultraviolet PL band with its peak at about 378 nm and a green PL band with its peak at about 540 nm. The ultraviolet PL band is generally attributed to the band-edge recombination of excitons whereas the green PL band is produced by defects in ZnO [15][16][17][22][23][24][25]. Therefore, the higher fraction of the green PL intensity in the PL spectrum suggests the presence of higher defect density in ZnO nanorods.…”

Section: Resultsmentioning

confidence: 99%

Improving the Efficiency of Dye-Sensitized Solar Cells by Growing Longer ZnO Nanorods on TiO₂ Photoanodes

Zhai¹,

Yang²,

Huang³

2017

Journal of Nanomaterials

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By increasing the temperature of hydrothermal reactions from 70 to 100 ∘ C, vertically aligned ZnO nanorods were grown on the TiO 2 thin film in the photoanode of dye-sensitized solar cells (DSSCs) as the blocking layer to reduce the electron back recombinations at the TiO 2 /electrolyte interfaces. The length effects of ZnO nanorods on the photovoltaic performances of TiO 2 based DSSCs were investigated by means of scanning electron microscope, X-ray diffractometer, photoluminescence spectrophotometer, and the photocurrent-voltage measurement. Under the illumination of 100 mW/cm 2 , the power conversion efficiency of DSSC with ZnO nanorods decorated TiO 2 thin film as its photoanode can be increased nearly fourfold from 0.27% to 1.30% as the length of ZnO nanorods increases from 300 to 1600 nm. The enhanced efficiency of DSSC with ZnO nanorods decorated TiO 2 thin film as the photoanode can be attributed to the larger surface area and the lower defect density in longer ZnO nanorods, which are in favor of more dye adsorption and more efficient transport in the photoanode.

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Section: Resultsmentioning

confidence: 99%

Improving the Efficiency of Dye-Sensitized Solar Cells by Growing Longer ZnO Nanorods on TiO₂ Photoanodes

Zhai¹,

Yang²,

Huang³

2017

Journal of Nanomaterials

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“…There are many reports on the photoluminescence, Raman spectroscopy, and electrical properties of group III doped ZnO thin films grown by these techniques in the literature, and also extensive research on the impurity defects [6][7][8]. However, there are only a few reports on the bulk growth and properties of group-III doped ZnO crystals.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of indium-doped highly conductive ZnO bulk crystals grown by the hydrothermal technique

Wang

Claflin

Jiménez

2018

Oxide-Based Materials and Devices IX

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Indium-doped ZnO bulk crystals grown by the hydrothermal method are highly-conductive, with resistivity at 0.01 Ωcm at room temperature as revealed by Hall-effect measurement. In this paper we report on structural and optical properties of these crystals. The grown In:ZnO crystals have been studied by high resolution X-ray diffraction, micro-Raman scattering and low-temperature photoluminescence and cathodoluminescence. It was found that the c lattice parameter of the grown In:ZnO crystal expanded 0.06% with respect to the lithium-doped ZnO crystal seed, and the In-doped ZnO overgrew the seed crystal pseudomorphically but with high quality crystallinity; the X-ray rocking curves show the FWHM of the Zn face and O faces are only 0.05 o and 0.1 o ; and the indium concentration in the crystal reaches the solubility limit. Raman spectra show strain relaxation gradually from the regrowth interface as well as a weak spectral feature at 723 cm -1 . The peak at 312 cm -1 noticed in hydrothermally grown In:ZnO nanostructures does not appear in our In-doped crystals, indicating that this peak may be associated with specific defects (e.g. surface related) of the nanostructures. Photoluminescence measurements show that an indium donor bound exciton peak I 9 (In 0 X) is the dominant peak in the PL spectrum, located at 3.3586 eV on the zinc face and 3.3577 eV on the oxygen face. Both of them deviated from the consensus literature value of 3.3567 eV, probably due to strain in the crystal induced by impurities.

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“…For example, these properties can be enhanced by doping with the following elements: Li, Mg, Al, Cu, W, etc. [3].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Properties of Al-doped ZnO Thin Films with Sputtering Pressure Deposition by RF Magnetron Sputtering

Shuai¹,

Hu²,

Chen³

et al. 2017

Proceedings of the 7th International Conference on Education, Management, Information and Mechanical Engineering (EMIM 2017)

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Defects in ZnO

Cited by 17 publications

References 59 publications

Improving the Efficiency of Dye-Sensitized Solar Cells by Growing Longer ZnO Nanorods on TiO₂ Photoanodes

Improving the Efficiency of Dye-Sensitized Solar Cells by Growing Longer ZnO Nanorods on TiO₂ Photoanodes

Structural and optical properties of indium-doped highly conductive ZnO bulk crystals grown by the hydrothermal technique

Investigation of the Properties of Al-doped ZnO Thin Films with Sputtering Pressure Deposition by RF Magnetron Sputtering

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Defects in ZnO

Cited by 17 publications

References 59 publications

Improving the Efficiency of Dye-Sensitized Solar Cells by Growing Longer ZnO Nanorods on TiO2 Photoanodes

Improving the Efficiency of Dye-Sensitized Solar Cells by Growing Longer ZnO Nanorods on TiO2 Photoanodes

Structural and optical properties of indium-doped highly conductive ZnO bulk crystals grown by the hydrothermal technique

Investigation of the Properties of Al-doped ZnO Thin Films with Sputtering Pressure Deposition by RF Magnetron Sputtering

Contact Info

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Resources

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Improving the Efficiency of Dye-Sensitized Solar Cells by Growing Longer ZnO Nanorods on TiO₂ Photoanodes

Improving the Efficiency of Dye-Sensitized Solar Cells by Growing Longer ZnO Nanorods on TiO₂ Photoanodes