Defects in plastically deformed semiconductors studied by positron annihilation: Silicon and germanium

Krause‐Rehberg, R.; Brohl, M.; Leipner, Hartmut S.; Drost, Th.; Polity, A.; Beyer, U.; Alexander, H.

doi:10.1103/physrevb.47.13266

Cited by 41 publications

(27 citation statements)

References 23 publications

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“…This is consistent with earlier studies on annealing of ion implantation damage and recrystallization of amorphous Ge where it has been found that the defects are removed at temperatures 300-500°C. [16][17][18] The annealing temperature of the observed vacancy clusters is similar to what Krause-Rehberg et al 7 found in high-stress and low-temperature deformed highpurity germanium.…”

Section: B Passupporting

confidence: 69%

“…5 However, as with other techniques, very little work has been published on germanium. Positron lifetime studies have been performed on bulk crystals, with defects of monovacancy size reported by Moser et al 6 Vacancy clustering and the annealing of these clusters has been studied by Krause-Rehberg et al 7 In this work we present results obtained by PAS and supported by Rutherford backscattering spectrometry/ channeling ͑RBS-c͒ on lattice damage and defects created in ion-implanted highly damaged or amorphized Ge. For all fluences annealing caused the formation of large vacancy clusters.…”

Section: Introductionmentioning

confidence: 55%

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Evolution of vacancy-related defects upon annealing of ion-implanted germanium

et al. 2008

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Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1 ϫ 10 12 cm −2 and 4 ϫ 10 14 cm −2 . Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1 ϫ 10 13 cm −2 and a fluence of 1 ϫ 10 14 cm −2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200-400°C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.

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Section: B Passupporting

confidence: 69%

Section: Introductionmentioning

confidence: 55%

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

et al. 2008

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“…Vacancies have also been found to pair with donors in Ge with positron annihilation (Arutyunov and Emtsev, 2007), while thorough investigations are still to be performed. Even though germanium exhibits interesting properties in ion implantation, i.e., it is easily amorphized and the recrystallization temperature is low (Hickey et al, 2007), surprisingly few positron studies seem to have been performed (Krause-Rehberg et al, 1993;Slotte et al, 2008). The situation is completely different for the Si-Ge alloys which have been studied to a large extent.…”

Section: Elemental Semiconductors Si Ge and Cmentioning

confidence: 94%

Defect identification in semiconductors with positron annihilation: Experiment and theory

2013

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Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.

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“…The first one at around 573 K apparently results in the formation of larger vacancy clusters. Open volume defects of monovacancy size, with positron lifetimes varying from 278-292 ps have been reported by Moser et al, 20 Corbel et al 21 and Wurschum et al 19 More recently, Polity et al 22 23 Similar results in self-and Si-implanted Ge have been reported by Peaker et al 13 Recrystallization of ion-implanted amorphous Ge have been studied with PAS by Slotte et al 24 In this Brief Report, we have studied neutron-irradiated Ge samples doped with Sb with positron lifetime spectroscopy. We show that irradiation generates vacancy defects that tentatively are identified as divacancies.…”

Section: Introductionmentioning

confidence: 97%

Divacancy clustering in neutron-irradiated and annealedn-type germanium

et al. 2008

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We have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation, the Sb-doped samples ͓͑Sb͒ = 1.5ϫ 10 15 cm −3 ͔ were annealed at 473, 673, and 773 K for 30 min. The positron lifetime was measured as a function of temperature ͑30-295 K͒. A lifetime component of 330 ps with no temperature dependence is observed in as-irradiated samples, identified as the positron lifetime in a neutral divacancy and indicating that the divacancy is stable at room temperature ͑RT͒. Annealing at 673 K resulted in an increase in the average positron lifetime, and in addition, the annealed samples further showed a larger lifetime component of 430 ps at RT, which is due to larger vacancy clusters. The average positron lifetime in the samples annealed at 473 K has a definite temperature dependence, suggesting that the divacancies become negative as the crystal recovers and the Fermi level moves upwards in the band gap. Annealing at 673 K, reduces the average lifetime and intensity of the defect component 2 at RT, indicating that the vacancy clusters have started to anneal. Negative divacancies are still present in the samples after this anneal. Annealing at 773 K is enough to remove all observable vacancy defects.

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Defects in plastically deformed semiconductors studied by positron annihilation: Silicon and germanium

Cited by 41 publications

References 23 publications

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Defect identification in semiconductors with positron annihilation: Experiment and theory

Divacancy clustering in neutron-irradiated and annealedn-type germanium

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