Defects in nonstoichiometric TiC studied by TDS

Seijbel, Léon J.; Hoondert, W.H.B.; Huijgen, Tom P.; Thijsse, Barend J.; Veen, A. van; Beukel, A. van den

doi:10.1016/0168-583x(91)95825-x

Cited by 3 publications

(2 citation statements)

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“…In the cases of noble gases (He, Ne, Ar, Kr and Xe), it is particularly convenient to determine characteristic temperatures of gas release [6][7][8][9][12][13][14][15][18][19][20], to deduce elemental diffusion kinetics and characteristics (i.e. apparent activation energy of diffusion) [11,[14][15][16][17], or to help in investigating structural defects [12][13][14][15][16]19,20]. Study of noble gases in materials as a function of temperature is particularly relevant for materials encountered in nuclear industry [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

“…apparent activation energy of diffusion) [11,[14][15][16][17], or to help in investigating structural defects [12][13][14][15][16]19,20]. Study of noble gases in materials as a function of temperature is particularly relevant for materials encountered in nuclear industry [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. Indeed, He is often largely produced or implanted in core materials of fusion and fission nuclear reactors and in nuclear wastes.…”

Section: Introductionmentioning

confidence: 99%

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A new thermo-desorption laser-heating setup for studying noble gas diffusion and release from materials at high temperatures

Horlait

Faure

Thomas

et al. 2021

Review of Scientific Instruments

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A new heating and gas treatment line for Thermo-Desorption Spectrometry (TDS) of noble gases (He, Ne, Ar, Kr and Xe) is presented. It was built with the primary objective to offer advanced temperature controls and capabilities while working in a cold-environment. By choosing a high-power continuous wave laser as an heating source, and using a Proportional-Integral-Derivative (PID) controller system, noble gases TDS can now be performed with fast and highly steady heating ramps (e.g. less than 1°C deviation from setpoint for ≤ 1°C.s -1 ramps). Sample temperature over 2000°C can also routinely be reached, with limited heating of the sample support and the sample chamber, offering the possibility to have several samples awaiting in the ultra-high vacuum chamber. We also present development efforts made to increase temperature homogeneity of the heated sample while limiting contacts with the sample holder.Recent results acquired with this TDS setup on krypton thermal diffusion in uranium dioxide (UO 2 ) as a function of O 2 additions are also presented as an application example.

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