Defects in nitride semiconductors as seen by positrons
Filip Tuomisto
Abstract:Positron annihilation spectroscopy is a powerful set of methods for the detection, identification and quantification of vacancy-type defects in semiconductors. In the past decades, it has been used to reveal the relationship between the (opto-)electronic properties and specific defects in a wide variety of elemental and compound semiconductors, including nitrides. In binary compounds, the selective sensitivity of the technique is rather strongly limited to cation vacancies that possess significant open volume … Show more
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