Defects in Monocrystalline Silicon

Ammon, Wilfried von; Sattler, Andreas; Kissinger, G.

doi:10.1007/978-3-319-48933-9_5

Cited by 9 publications

(9 citation statements)

References 108 publications

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“…N is one of the fundamental impurities incorporated in the Si lattice and has attracted a lot of attention in the last 50 years [9][10][11][12][13][14]. It is introduced in Si either during material processing in a nitrogen atmosphere or through implantation [9].…”

Section: Introductionmentioning

confidence: 99%

“…It also enhances oxygen precipitation, which is important for internal gettering as it suppresses the effect of deleterious metal contaminants [13,17]. It also suppresses self-interstitial diffusion and controls the density and size of crystal-originated particles (COPs) [11][12][13]18], thus improving dramatically the gate oxide integrality of semiconductor devices. It suppresses void formations, which are essentially vacancy aggregates that degrade properties of the devices [12,19].…”

Section: Introductionmentioning

confidence: 99%

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Nitrogen-Related Defects in Crystalline Silicon

Sgourou,

Sarlis,

Chroneos

et al. 2024

Applied Sciences

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Defects and impurities play a fundamental role in semiconductors affecting their mechanical, optical, and electronic properties. Nitrogen (N) impurities are almost always present in a silicon (Si) lattice, either unintentionally, due to the growth and processing procedures, or intentionally, as a result of implantation. Nitrogen forms complexes with intrinsic defects (i.e., vacancies and self-interstitials) as well as with other impurities present in the Si lattice such as oxygen and carbon. It is, therefore, necessary to investigate and understand nitrogen-related defects, especially their structures, their energies, and their interaction with intrinsic point defects and impurities. The present review is focused on nitrogen-related defects (for example Ni, Ns, NiNi, NiNs, NsNs); nitrogen–self-interstitial and nitrogen-vacancy-related complexes (for example NsV, (NiNi)Sii, (NsNs)V); nitrogen–oxygen defects (for example NO, NO2, N2O, N2O2); more extended clusters such as VmN2On (m, n = 1, 2); and nitrogen–carbon defects (for example CiN and CiNO). Both experimental and theoretical investigations are considered as they provide complementary information.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nitrogen-Related Defects in Crystalline Silicon

Sgourou,

Sarlis,

Chroneos

et al. 2024

Applied Sciences

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“…10 In essence, the presence of N and its reactions with intrinsic defects leads to the reduction of point defect aggregates during microelectronic device treatments. 11 The formation of these aggregates have generally negative effects in device performance. N also reacts with C and a number of photoluminescence lines related with N-C pairs have been reported 12 in nitrogen implanted Si.…”

Section: Introductionmentioning

confidence: 99%

Density functional theory study of the VmN2On (m,n = 1,2) complexes in silicon

et al. 2023

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Nitrogen is an important impurity in Czochralski grown silicon (Cz–Si) as it enhances oxygen precipitation through the formation of vacancy–nitrogen–oxygen clusters and in particular the V[Formula: see text]N2O[Formula: see text] complexes. Here, we employ density functional theory (DFT) to predict the structure of V[Formula: see text]N2O[Formula: see text] ([Formula: see text], 2). We report that the lowest energy V[Formula: see text]N2O[Formula: see text] ([Formula: see text], 2) defects are very strongly bound. These results are consistent, and support the previously reported theoretical and experimental conclusions that V[Formula: see text]N2O[Formula: see text] structures could form.

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“…Heat treatments for internal getter synthesis through the decomposition of a supersaturated oxygen solid solution in silicon matrix require combining temperature and duration so as to produce an efficient gettering environ-ment (sizes and quantity of microdefects) providing for reliable trapping of detrimental impurities during further treatments [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis

Бублик¹,

Воронова²,

Щербачев³

et al. 2019

MoEM

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Gettering is defined as a process by which metal impurities in the device region are reduced by localizing them in predetermined, passive regions of the silicon wafer. Internal or intrinsic gettering is an effective way to reduce the contamination in active regions. The generation of internal getters is based on the decomposition of the supersaturated oxygen solid solution in silicon, which favours the formation of a complex defect system in silicon that consists of various precipitate/dislocation agglomerates. Regularities of microdefect formation during oxygen solid solution decomposition in silicon have been studied. We show that actual solid solution supersaturation, temperature and heat treatment duration determine the structure of the solid solution. Combining these factors, including heat treatment parameters, one can control solid solution decomposition rate and SiOx precipitate sizes and quantity. The methods of X-ray diffuse scattering and transmission electron microscopy have shown high efficiency for studying the effect of heat treatment in crystals. For annealing at 450 °C, solid solution decomposition occurs at high supersaturation degrees, and concentration inhomogeneity regions may form at an early decomposition stage over the actual annealing time (up to 40 h). With an increase in the temperature of subsequent annealing to 650 °C, local regions with above-average oxygen supersaturation degrees increase the efficiency of oxygen solid solution decomposition. Further, an increase in annealing temperature to T > 1000 °С results in a more intense generation of the largest precipitates at the expense of the smaller ones. Once the precipitate sizes become sufficiently large, the elastic stresses start to relax, leading to partial incoherence and the generation of dislocations around the particles. This type of defect structure seems to be the most efficient getter.

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Defects in Monocrystalline Silicon

Cited by 9 publications

References 108 publications

Nitrogen-Related Defects in Crystalline Silicon

Nitrogen-Related Defects in Crystalline Silicon

Density functional theory study of the VmN2On (m,n = 1,2) complexes in silicon

Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis

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