2022
DOI: 10.1039/d1ra08884j
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Defects in graphene-based heterostructures: topological and geometrical effects

Abstract: The combination of graphene (Gr) and graphene-like materials provides the possibility of using two-dimensional (2D) atomic layer building blocks to create unprecedented architectures.

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Cited by 16 publications
(7 citation statements)
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References 93 publications
(109 reference statements)
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“…48,52,54 These defects have been observed in graphene, h-BN, BP, and TMDs, among others, under electron irradiation conditions. 29,50 1D defects in 2D materials frequently arise either at the boundary between materials or within holes. 55 Unlike baseplane defects, edge defects exhibit a large number of unsaturated bonds, which render them highly reactive.…”
Section: Manipulation Of Intrinsic Defects and Their Effectsmentioning
confidence: 99%
See 1 more Smart Citation
“…48,52,54 These defects have been observed in graphene, h-BN, BP, and TMDs, among others, under electron irradiation conditions. 29,50 1D defects in 2D materials frequently arise either at the boundary between materials or within holes. 55 Unlike baseplane defects, edge defects exhibit a large number of unsaturated bonds, which render them highly reactive.…”
Section: Manipulation Of Intrinsic Defects and Their Effectsmentioning
confidence: 99%
“…The vacancy types and equilibrium concentrations are determined by the formation energy, which also affects their prevalence. , Electron-deficient and electron-rich vacancies can be distinguished based on the types of stripped atoms. In general, anionic vacancies are more prevalent than cationic vacancies due to the former’s lower formation energy. , Dislocation defects result from the local irregular arrangement of lattice atoms, and they are typically found at marginal sites in 2D materials. , For example, pentagon–heptagon distribution (5–7) defects in graphene and hexagonal boron nitride (h-BN) and pentagon–nonagon (5–9) defects in BP can be observed; the latter is a consequence of anisotropic buckling lattice structures. On the other hand, topological defects, which involve the recombination of the local lattice and the rotation of bonds, are widespread in hexagonal graphene and graphene-like systems. , Other typical topological defects include various heptagon-pentagon (7–5) defects and Thrower-Stone–Wales defects, as well as double pentagon–octagon (5–8–5) defects, double pentagon-heptagon (D5–D7) defects, and triple pentagon–heptagon (T5–T7) defects (Figure b). ,, These defects have been observed in graphene, h-BN, BP, and TMDs, among others, under electron irradiation conditions. , …”
Section: Intrinsic Defects-related Phase Engineering In 2d Energy Nan...mentioning
confidence: 99%
“…However, so far, major attention has been paid to the well studied Bi-based topological insulators for constructing the vdW heterostructures with different magnetic materials [27,[33][34][35][36][37][38][39]. Apart from these, other topological materials have also been investigated in the heterostructure context by combining with a variety of magnetic materials, such as PbTe/SnTe [40], CoBr 2 /Pt 2 HgSe 3 /CoBr 2 , Pt 2 HgSe 3 [41], MnBi 2 Te 4 /CrI 3 [42], MoS 2 /WSe 2 [25,26], graphene-based heterostructures [43]. In the same line of thought, enormous efforts are invested in developing a quantum system to achieve this QAH conductivity at high temperature [44][45][46].…”
Section: Introductionmentioning
confidence: 99%
“…Effects due to emerging defects during the synthesis of graphene sheets have * Author to whom any correspondence should be addressed. been reported in [9,10], whereas synthesis and applications in quantum dots were discussed in [11].…”
Section: Introductionmentioning
confidence: 99%