“…The vacancy types and equilibrium concentrations are determined by the formation energy, which also affects their prevalence. , Electron-deficient and electron-rich vacancies can be distinguished based on the types of stripped atoms. In general, anionic vacancies are more prevalent than cationic vacancies due to the former’s lower formation energy. , Dislocation defects result from the local irregular arrangement of lattice atoms, and they are typically found at marginal sites in 2D materials. , For example, pentagon–heptagon distribution (5–7) defects in graphene and hexagonal boron nitride (h-BN) and pentagon–nonagon (5–9) defects in BP can be observed; the latter is a consequence of anisotropic buckling lattice structures. − On the other hand, topological defects, which involve the recombination of the local lattice and the rotation of bonds, are widespread in hexagonal graphene and graphene-like systems. , Other typical topological defects include various heptagon-pentagon (7–5) defects and Thrower-Stone–Wales defects, as well as double pentagon–octagon (5–8–5) defects, double pentagon-heptagon (D5–D7) defects, and triple pentagon–heptagon (T5–T7) defects (Figure b). ,, These defects have been observed in graphene, h-BN, BP, and TMDs, among others, under electron irradiation conditions. , …”