Defects in GaN film grown on Si (100) substrate

Design and characterization of electrically self-isolated GaN-on-Si junctionless fin-shaped-channel field-effect transistor with higher cost-effectiveness for low-power applications

“…It has been pointed out that there is a critical issue of a large lattice mismatch between GaN and Si that might cause cracks and defects. 4) In order to improve the GaN layer quality, active efforts have been made; the use of a very thin AlN as the buffer layer for the epitaxial growth of GaN on a Si substrate without significant modification in the energy-band diagram across the GaN=Si interface is an example. 5) Two-and threedimensional (2D and 3D) simulations have been rigorously carried out to optimally design the GaN-on-Si JLFET in terms of critical dimensions and process parameters.…”