Defects generation and annihilation in GaN grown on patterned silicon substrate

Sawaki, Nobuhiko; Ito, Syun; Nakagita, T.; Iwata, Hiroyuki; Tanikawa, Tomoyuki; Irie, M.; Honda, Yoshio; Yamaguchi, M.; Amano, Hiroshi

doi:10.1117/12.2002738

Search citation statements

Order By: Relevance

Paper Sections

Select...

Results1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2015

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Unfortunately, we could not have perfect coalescence and a lot of stack faults are generated. [17] The HP growth mode is quite different. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates

et al. 2015

View full text Add to dashboard Cite

In this paper, we investigate the effect of pressure on the growth mode of high quality (10-11) GaN using an epitaxial lateral over growth (ELO) technique by metal organic chemical vapor deposition (MOCVD). Two pressure growth conditions, high pressure (HP) 1013 mbar and low pressure growth (LP) 500 mbar, are employed during growth. In the high pressure growth conditions, the crystal quality is improved by decreasing the dislocation and stack fault density in the strip connection locations. The room temperature photoluminescence measurement also shows that the light emission intensity increases three times using the HP growth condition compared with that using the LP growth conditions. In the low temperature (77 K) photoluminescence, the defects-related peaks are very obvious in the low pressure growth samples. This result also indicates that the crystal quality is improved using the high pressure growth conditions.

show abstract

“…Unfortunately, we could not have perfect coalescence and a lot of stack faults are generated. [17] The HP growth mode is quite different. In Fig.…”

Section: Resultsmentioning

confidence: 99%