Defects formation in sublimation grown 6H-SiC single crystal boules

Madar, R.; Anikin, M. M.; Chourou, K; Labeau, M.; Pons, M.; Blanquet, Elisabeth; Dedulle, Jean-Marc; Bérnard, C.; Milita, Silvia; Baruchel, J.

doi:10.1016/s0925-9635(97)00068-x

Cited by 13 publications

(4 citation statements)

References 38 publications

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“…10(b) and (c)). Defect formation analysis, as done for SiC growth [64,65], should be very useful to understand the growth mechanisms. This growth mode is related to low supersaturation conditions and epitaxial growth.…”

Section: Resultsmentioning

confidence: 99%

Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD

Claudel¹,

Blanquet²,

Chaussende³

et al. 2009

Journal of Crystal Growth

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To achieve AlN bulk growth, high temperature CVD process using chlorine chemistry was investigated. High growth rate and high crystalline quality are targeted for both polycrystalline and epitaxial AlN films grown on (0 0 0 1) alpha-Al2O3 Sapphire and (0 0 0 1) off axis 4H SiC or on axis 6H SiC single crystal Substrates. Thermodynamic calculations were carried out to select the more appropriate inert materials for the reactor and to understand the chemistries of Al chlorination and AlN deposition steps. The reactants were ammonia (NH3) and aluminum chlorides (AlClx) species formed in situ using chlorine gas (Cl-2) reaction with high purity Al wires. Deposition temperature was varying from 1100 to 1800 degrees C. Influences of temperature, total pressure, Cl-2 flow rate and carrier gas (Ar or H-2) on growth rate, surface morphology and crystalline state are presented. As results, films morphology is related to a variation of the thermodynamic supersaturation. As-grown AlN layers surface morphologies were studied by SEM, FEG-SEM and AFM. Crystalline state, crystallographic orientations and epitaxial relationships with substrates were obtained from theta/2 theta X-ray diffraction and X-ray pole figure, respectively. Growth rates up to 200 mu m h(-1) have been reached for polycrystalline AlN layers. (C) 2009 Elsevier B.V. All rights reserved

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Section: Resultsmentioning

confidence: 99%

Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD

Claudel¹,

Blanquet²,

Chaussende³

et al. 2009

Journal of Crystal Growth

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“…The wafer cut from the middle of the new grown crystal clearly indicates the enlargement of the ingot lateral size with respect to that of the seed. The enlargement is mainly produced by the re-orientation of crystallites of the polycrystals growing around the main crystal and their incorporation into it [6]. The quality of this new enlarged crystal is not very good, the quantity of micropipes and cracks can be observed at the wafer periphery, while its central part is nearly defect free.…”

Section: Resultsmentioning

confidence: 99%

Structural defects in SiC ingots investigated by synchrotron diffraction imaging

Pernot¹,

Pernot-Rejmánková²,

Anikin³

et al. 2001

J. Phys. D: Appl. Phys.

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4H silicon carbide as-grown ingots were investigated by diffraction imaging using synchrotron radiation. The white beam section topographs obtained for various sample geometries allowed us to reveal structural imperfections before slicing the bulky ingots to the thin wafers used as electronic device substrates. The systematic investigation indicated that the observed inclusions of different polytypes in 4H-SiC ingots are correlated with the 8° off-axis orientation of the seed. These inclusions, formed at the beginning of the crystal growth, provoke planar defects that propagate along the main vertical axis of the cylindrical crystal. New findings permitted us to understand the inclusion formation with the aim to increase the useful volume.

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“…The investigation of a SiC boule by horizontal and vertical section topography reveals that the enlargement process results from a progressive alignment of domains adjacent to the seed and initially disoriented by a continuous deformation of the boundary zones during the growth. A complete description and analysis of the results obtained so far by this technique have been published elsewhere together with a comparison with the work already published on this subject (Madar et al 1997, Milita et al 1998, Moulin et al 2001.…”

Section: Thermal Fieldmentioning

confidence: 99%

“…Probably because of a particular orientation, some grains grow from the seed level to the top of the ingot. It has been shown (Madar et al 1997, Milita et al 1998 that some crystallites in the polycrystal have a common axis and an orientation similar to that of the main crystal. In the case of an enlargement process, these crystallites formed subgrains which gradually join the main crystal.…”

Section: Thermal Fieldmentioning

confidence: 99%

Defects in sublimation-grown SiC bulk crystals

Madar¹,

Pernot²,

Anikin³

et al. 2002

J. Phys.: Condens. Matter

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In view of its excellent thermal, mechanical and electronic properties, silicon carbide is the reference semiconductor material for high-temperature, highfrequency and high-power devices.Ingots of monocrystalline SiC which are currently grown by the seeded sublimation growth technique have opened the path to the production of largearea SiC wafers. Despite constant progress in crystal growth, the development of industrial applications has been up to now severely limited by the insufficient quality and size of the substrates. This situation results mainly from the fact that the growing process is quite complex. As a consequence, it is quite difficult to control the growth of a given polytype and the doping level while decreasing the number of defects such as misoriented domains, inclusions, macrodefects and micropipes.This paper is mainly devoted to a review of our work on the influence of the seed characteristics and the growth process parameters, such as the thermal field and the pressure, on the occurrence of defects in the as grown ingot and on the enlargement process. Polytype identification and morphology, structural perfection and defect analyses have been carried out using mainly polarized light microscopy and x-ray white-beam synchrotron topography.

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Defects formation in sublimation grown 6H-SiC single crystal boules

Cited by 13 publications

References 38 publications

Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD

Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD

Structural defects in SiC ingots investigated by synchrotron diffraction imaging

Defects in sublimation-grown SiC bulk crystals

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