Defects and oxidation resilience in InSe

Xiao, Kaijun; Carvalho, Alexandra; Neto, A. H. Castro

doi:10.1103/physrevb.96.054112

Cited by 62 publications

(93 citation statements)

References 45 publications

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“…In the middle-field regime, the nonmonotonic behavior of σ xx is exhibited, which is in line with the result in Ref. [36]. In the lowfield regime, the power dependence of σ xx is shown and we fit the data as σ xx ∝ B −1.45 .…”

Section: B Magnetic Fieldsupporting

confidence: 89%

“…First of all, we investigate the variation of the transverse magnetoconductivity σ xx with the Fermi energy ε, as the Fermi energy is usually away from zero due to the finite carrier density in real samples. For weakly tilted type-I WSMs, two regimes need to be distinguished [17,36]: the quantum limit regime and the quantum oscillation regime. The former refers to the regime of ε < ε 1v , with…”

Section: A Fermi Energymentioning

confidence: 99%

“…He considered the long-range charged impurities scattering, and within the Born approximation, he obtained a linear magnetoresistance when the chemical potential coincides with the zeroth LL. Recently the magnetotransport problem have been reexamined in WSMs by many researchers [14,17,[34][35][36]. In particular, different models of short-range impurities and charged (Coulomb) impurities have been proposed for the study of transverse magnetoconductivity [34,35], with a rich variety of conductivity scaling regimes being identified.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, different models of short-range impurities and charged (Coulomb) impurities have been proposed for the study of transverse magnetoconductivity [34,35], with a rich variety of conductivity scaling regimes being identified. Xiao et.al [36] analyzed the effect of the chemical potential and temperature on the magnetoconductivity in WSMs.…”

Section: Introductionmentioning

confidence: 99%

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Disorder and magnetoconductivity in tilted Weyl semimetals

Wang

2020

Phys. Rev. B

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Gapless Weyl semimetals (WSMs) are a novel class of topological materials that host massless Weyl fermions as their low-energy excitations. When the Weyl cone is tilted, the Lorentz invariance is broken and the Lifshitz transition drives the system from type-I WSMs into type-II WSMs. Here, based on the lattice model, we perform a systematic numerical study of the effect of onsite disorder on the diagonal magnetoconductivity in tilted WSMs. We use the self-consistent Born approximation to calculate the disorder-induced self-energy and then apply the Kubo-Streda formula to calculate the diagonal magnetoconductivity. For the transverse magnetoconductivity σxx, the disorder is found to show distinct effects in the quantum limit regime and in the quantum oscillation regime of type-I WSMs, which could be understood from the Einstein's relationship. With strong disorder, σxx shows a linear relation with the inverse magnetic field 1 B , which exhibits certain robustness to both the Fermi energy and the Weyl cone tilting. For the longitudinal magnetoconductivity σzz, the strong disorder can break the positive magnetoconductivity as well as the Shubnikov-de Haas oscillations. By analyzing the spectral function, we find that the chiral anomaly is still preserved at strong disorder even when the Weyl cone is overtilted, as there is no gap opening around the Weyl nodes. The implications of our results for experiments are discussed. arXiv:2002.06292v1 [cond-mat.mes-hall]

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Section: B Magnetic Fieldsupporting

confidence: 89%

Section: A Fermi Energymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Disorder and magnetoconductivity in tilted Weyl semimetals

Wang

2020

Phys. Rev. B

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“…These experiments have identified two main photoluminescence lines, interpreted 30 as a lower energy transition between bands dominated by s and p z orbitals (A-line) and hot luminescence, involving holes in a deeper valence band based on p x and p y orbitals (B-line). The band structure analysis of mono-and few-layer InSe [32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48] has revealed that the conduction and valence band edges near the Γ-point are non-degenerate, being dominated by s and p z orbitals of both metal and chalcogen atoms. Combined with the opposite z → −z (mirror reflection) symmetry of conduction and valence bands, this determines that the transition across the principal band gap has a dominantly electric dipole-like character, coupled to out-of-plane polarized photons.…”

Section: Introductionmentioning

confidence: 99%

Spin-orbit coupling, optical transitions, and spin pumping in monolayer and few-layer InSe

2017

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We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by px,y ↔ pz hybridization due to intra-atomic SOC in both In and Se, can be viewed as a transition between two dominantly s-and pz-orbital based bands, accompanied by an electron spin-flip. Having parametrized k · p theory using first principles density functional theory we estimate the absorption for σ ± circularly polarized photons in the monolayer as ∼ 1.5%, which saturates to ∼ 0.3% in thicker films (3 − 5 layers). Circularly polarized light can be used to selectively excite electrons into spin-polarized states in the conduction band, which permits optical pumping of the spin polarization of In nuclei through the hyperfine interaction.

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Liquid Phase Exfoliated Indium Selenide Based Highly Sensitive Photodetectors

Curreli

Serri

Spirito

et al. 2020

Adv Funct Materials

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Layered semiconductors of the IIIA-VIA group have attracted considerable attention in (opto)electronic applications thanks to their atomically thin structures and their thickness-dependent optical and electronic properties, which promise ultrafast response and high sensitivity. In particular, 2D indium selenide (InSe) has emerged as a promising candidate for the realization of thin-film field effect transistors and phototransistors due to its high intrinsic mobility (>10 2 cm 2 V −1 s −1 ) and the direct optical transitions in an energy range suitable for visible and near-infrared light detection. A key requirement for the exploitation of large-scale (opto)electronic applications relies on the development of low-cost and industrially relevant 2D material production processes, such as liquid phase exfoliation, combined with the availability of high-throughput device fabrication methods. Here, a β polymorph of indium selenide (β-InSe) is exfoliated in isopropanol and spray-coated InSe-based photodetectors are demonstrated, exhibiting high responsivity to visible light (maximum value of 274 A W −1 under blue excitation 455 nm) and fast response time (15 ms). The devices show a gate-dependent conduction with an n-channel transistor behavior.Overall, this study establishes that liquid phase exfoliated β-InSe is a valid candidate for printed high-performance photodetectors, which is critical for the development of industrial-scale 2D material-based optoelectronic devices.

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Defects and oxidation resilience in InSe

Cited by 62 publications

References 45 publications

Disorder and magnetoconductivity in tilted Weyl semimetals

Disorder and magnetoconductivity in tilted Weyl semimetals

Spin-orbit coupling, optical transitions, and spin pumping in monolayer and few-layer InSe

Liquid Phase Exfoliated Indium Selenide Based Highly Sensitive Photodetectors

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